Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

Hoffmann, P.; Файнер, Н. И.; Косинова, М. Л.; Baake, Olaf; Ensinger, Wolfgang

doi:10.5772/24330

Cited by 16 publications

(21 citation statements)

References 284 publications

(175 reference statements)

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“…The variety of volatile compounds used nowadays for CVD synthesis of SiC x N y films is described in details in Ref. [13]. The considerable work performed to find new types of precursors has demonstrated researchers' attempts to obtain a precursor that would satisfy most requirements for the compounds to be used in the CVD process [14].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

et al. 2015

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“…Plasma synthesis of thin films for various applications using hexamethyldisilazane (HMDS), [(CH 3 ) 3 Si] 2 NН, as a precursor has long attracted researchers' attention because both the precursor and synthesis products possess unique properties. HMDS is a highly volatile organosilicon compound, sufficiently safe and stable during storage and available commercially.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of thin silicon carbonitride films from hexamethyldisilazane in an inductively coupled plasma reactor

et al. 2015

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SiC x N y :H films have been grown by inductively coupled plasma chemical vapor deposition via hexamethyldisilazane decomposition at substrate temperatures from 50 to 450°C and rf powers from 100 to 500 W. The growth rate and physicochemical properties of the films (their elemental composition, refractive index, optical band gap, and optical transmittance) have been shown to be weak functions of process condi tions. The process offers high stability, and the films are uniform in thickness over the entire substrate surface. The SiC x N y :H films have a polymer like structure, high transmission, a refractive index near 2.0, and hard ness of 8-9 GPa, which is typical of films produced from hexamethyldisilazane by low temperature plasma deposition processes.

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“…h-BC x N y probably has a honeycomb structure and an energy band gap smaller than that of h-BN; it is a new semiconducting material which possesses varying band gaps related to the different elemental compositions. c-BC x N y is predicted as a material with varying superhard properties [1,2].…”

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confidence: 99%

Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature

et al. 2012

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Layered samples Si(100)/C/Ni/BC(x)N(y) and Si(100)/C/Cu/BC(x)N(y) were produced by physical vapor deposition of a metal (Ni, Cu, resp.) and low-pressure chemical vapor deposition of the boron carbonitride on a Si(100) substrate. Between the Si and the Ni (Cu) and on the surface of the Ni (Cu) layer, thin carbon layers were deposited, as a diffusion barrier or as a protection against oxidation, respectively. Afterwards, the surface carbon layer was removed. As precursor, trimethylamine borane and, as an auxiliary gas, H(2) and NH(3) were used, respectively. The chemical compositions of the layers and of the interfaces in between were characterized by total-reflection X-ray fluorescence spectrometry combined with near-edge X-ray absorption fine-structure spectroscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. The application of H(2) yielded the BC(x)N(y) compound whereas the use of NH(3) led to a mixture of h-BN and graphitic carbon. At the BC(x)N(y)/metal interface, metal borides could be identified. At the relatively high synthesis temperature of 700 °C, broad regions of Cu or Ni and Si were observed between the metal layer and the substrate Si.

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Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

Cited by 16 publications

References 284 publications

Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

Synthesis of thin silicon carbonitride films from hexamethyldisilazane in an inductively coupled plasma reactor

Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature

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