High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture APL: Org. Electron. Photonics 5, 238 (2012) High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture Appl. Phys. Lett. 101, 173304 (2012) Response to "Comment on 'Silver/silicon dioxide/silver sandwich films in the blue-to-red spectral regime with negative-real refractive index'" [Appl. Phys. Lett. 101, 156101 (2012)] Appl. Phys. Lett. 101, 156102 (2012) On the determination of the glass forming ability of AlxZr1−x alloys using molecular dynamics, Monte Carlo simulations, and classical thermodynamics J. Appl. Phys. 112, 073508 (2012) Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl.Chemical bonding and local order around the different atoms of thick amorphous SiC x N y deposits ͓0.03рx/(xϩy)р0.67͔ prepared with chemical vapor deposition at 1000-1200°C using TMS-NH 3 -H 2 have been investigated using x-ray photoelectron spectroscopy ͑XPS͒, Raman spectrometry, Fourier transform infrared spectrometry ͑FT-IR͒, electron energy loss spectroscopy ͑EELS͒ and 29 Si magic-angle spinning nuclear magnetic resonance spectrometry ͑MAS-NMR͒. XPS analyses have shown that the main bonds are Si-C, Si-N, and C-C, and have suggested the existence of C-N bonds. According to Raman analyses and complementary FT-IR absorption of thin films, the coatings are nonhydrogenated. Si, C and N atomic chemical environments are more complicated than in a mixture of pure Si 3 N 4 -SiC phases. The examination of the Si KL 2,3 L 2,3 line shapes recorded by XPS have allowed one to state the existence of Si(C 4Ϫn N n ) units. Mixed coordination shells around silicon have been confirmed by EELS analyses. Additionally, FT-IR reflection analyses have proved that Si is both bonded with N and C. Indirect indication has been obtained owing to the 29 Si MAS-NMR analyses of powders. Raman analyses have been conclusive to assume that C-C bonds correspond to a mixed sp 3 Ϫsp 2 carbon configuration linked with Si(C 4Ϫn N n ) tetrahedra with 0рnр4.

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Elaboration of amorphous SiCPc: materials was performed using a conventional thermaly activated CVD at 1000-12003C from the '1MS-NH3-H2 system. 'I'he influence on the deposition rate and the composition was investigated using an experimental design by varq-ing: deposition temperature, pressure and hTb flow rate. A set of 16 samples SiCxNy with x!y ranged from 0.0.1. to 1.69 was prepared. .4ccurate determination of the elemental compositon required EPM.4-U?)S and XPS and occasionally RBS analyses. The chemical bonding system was investigated by XPS and Raman spectroscopy. Comparisons between CVD prepared silicon carbide and nitride reference samples and the SiCxNy materials were achieved. It was concluded that for x.y < 0.15, Si-iK was predominant, whereas for x:y 2 0.86, the amorphous deposits mainly contain SiN and Si-C, and additionally-carbon bonds includmg C-Si and CC , and probably a rather low C-N contribution. Raman study shown that CC bonding could be related to a carbon excess acting as a binder in-between the tetrahedral networks of Si-C and SiX. The first results of EXELFS concerning a carbon poor deposit shown that Si has a first coordination shell similar to that of Si3N4.