Structural and Piezoelectric Properties of DC-Sputtered AlN Films Deposited on Different Si-Based Substrates

Ingrosso, I.; Tasco, V.; Altamura, Davide; Vittorio, Massimo De; Passaseo, A.

doi:10.1080/00150190902987699

Cited by 3 publications

(2 citation statements)

References 18 publications

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“…In most of the previous work sapphire, Silicon or SiC was used as the substrate, but it is believed that Si/Si3N4 substrate provides further flexibility in the development of Si-based technological applications [12]. PLD in particular lends itself to low temperature processing because the average energy of particles in the laser-evaporated plume is considerably higher (10 eV) than the thermal evaporation energy (0.1 eV).…”

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confidence: 99%

Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

2016

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AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles. Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical composition of the films. These measurements detected carbon and oxygen contamination at the surface. In the highresolution X-ray photoelectron spectroscopy Al2p data, binding energies for Al-N and Al-O species were identified but no Al-Al species were present. In the N1s data, N-O species were not detected, but chemically bonded O was present in the films as Al-O species. Furthermore the value of optical energy gap, Eg was about 5.3 (± 0.1) eV. The composition varied with process conditions, and the nitrogen content decreased in AlN films processed above 500°C.

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Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

2016

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“…Among all its properties, the high sound velocity makes AlN a promising candidate for high-frequency surface acoustic wave (SAW) devices [2][3][4], in comparison with the conventional SAW material as LiNbO 3 , LiTaO 3 or quartz. There are many deposition techniques employed for obtaining high-quality (c-axis-oriented or single-crystalline) AlN thin films on various substrates, such as pulsed laser deposition [5], chemical vapor deposition [6], molecular beam epitaxy [7] and direct current or radio frequency (RF) sputtering [8][9][10][11][12][13][14][15]. The most commonly used technique is sputtering because it is possible to obtain good orientation and uniform films close to single-crystal morphology even at low substrate temperature or on amorphous substrate with easier fabrication [16].…”

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confidence: 99%

Fabrication of AlN Films by RF Magnetron Sputtering for Surface Acoustic Wave Applications

Shih

Zoh

2014

Ferroelectrics

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Highly c-axis oriented AlN films were successfully deposited on SiO 2 /Si and sapphire substrates by RF magnetron sputtering. The optimum deposition conditions are nitrogen gas ratio (N 2 /Ar + N 2 ) of 40%, RF power of 400 W, deposition pressure of 4 mTorr, and substrate temperature of 200 • C. The full width at half maximum intensity of AlN(002) peak of AlN films on SiO 2 /Si and sapphire substrates sputtered at the optimum deposition conditions were about 0.26 • and 0.2 • , respectively. The phase velocity of the fabricated SAW device with AlN/SiO 2 /Si and AlN/sapphire layered structure was estimated to be about 4996 and 5589 m/s, respectively.

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Bending Analysis in AlN-Based Multilayered Piezoelectric Cantilevers

et al. 2009

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Structural and Piezoelectric Properties of DC-Sputtered AlN Films Deposited on Different Si-Based Substrates

Cited by 3 publications

References 18 publications

Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition

Fabrication of AlN Films by RF Magnetron Sputtering for Surface Acoustic Wave Applications

Bending Analysis in AlN-Based Multilayered Piezoelectric Cantilevers

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