Bending Analysis in AlN-Based Multilayered Piezoelectric Cantilevers

Giordano, Cristina; Ingrosso, I.; Grande, M.; Qualtieri, Antonio; Pugliese, Marco; Todaro, M. T.; Tasco, V.; Vittorio, Massimo De; Passaseo, A.

doi:10.1080/00150190902987848

Cited by 4 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…, the deflection of the cantilever increases with the length. This residual stress or thermal stress can be controlled through a careful optimization of the growth parameters and device geometrical features, such as the thermal budget or the thickness ratio between electrodes and piezoelectric film . Nevertheless, some applications such as flow sensors for the lateral line system of fish use the advantage of the stress effect (i.e., sensitive and low value applied forces range) .…”

Section: Resultsmentioning

confidence: 99%

Modeling and characterization of piezoelectric beams based on an aluminum nitride thin‐film layer

Herth

Algré

Rauch

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

This paper presents a method to determine the mechanical properties of piezoelectric thin films. The vibrational behavior of microcantilevers and clamped–clamped beams actuated by aluminum nitride (AlN) piezoelectric films were analyzed in order to investigate the suitability of these devices as characterization tools. Different geometries of resonators composed of a free‐standing structure made up of a TiPt/AlN/TiPt piezoelectric stack were tested. The out‐of‐plane motion of the resonators was assessed by laser Doppler vibrometry. An AlN Young's modulus of about 200 GPa was extracted from resonance‐frequency measurements by means of Comsol software simulations that allow taking into account AlN underetching. This value of Young's modulus was compared to the one measured by a nanoindentation technique. The quality of crystallinity was also assessed using X‐ray diffraction (XRD) measurements. We then estimated the residual stress (about 200 MPa) using an interferometry measurement.

show abstract

Section: Resultsmentioning

confidence: 99%

Modeling and characterization of piezoelectric beams based on an aluminum nitride thin‐film layer

Herth

Algré

Rauch

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…These pictures have been acquired by a FEI Nova NanoSEM 200 System and show the cantilever upwards bending due to the residual stress present inside the multilayer structure. The degree of bending of cantilevers related to the residual stress can be controlled through a careful optimization of the growth parameters and the device geometrical features, such as the DC bias applied to the substrate and the thickness ratio between electrodes and piezoelectric film [9].…”

Section: Methodsmentioning

confidence: 99%

Stress-driven AlN cantilever-based flow sensor for fish lateral line system

Qualtieri

Rizzi

Todaro

et al. 2011

Microelectronic Engineering

Self Cite

View full text Add to dashboard Cite

“…[203][204][205][206] The bending angles and directions can be engineered by inducing a tensile or compressive stress in each layer from the growth process [200,207] The residual stress technique has been applied in various materials such as SiC, [199] SiN, [208][209][210] SiO x , [198,202] and AlN. [197,211] Figure 6a shows a typical procedure for fabrication of a standing piezoresistive cantilever, [197] which can be generalized for all types of out-of-plane structures. First, pre-strained material layers are deposited onto a sacrificial layer.…”

Section: Out-of-plane Bending Cantileversmentioning

confidence: 99%

“…[ 203–206 ] The bending angles and directions can be engineered by inducing a tensile or compressive stress in each layer from the growth process [ 200,207 ] The residual stress technique has been applied in various materials such as SiC, [ 199 ] SiN, [ 208–210 ] SiO x , [ 198,202 ] and AlN. [ 197,211 ]…”

Section: D Architectures Using Stress In Thin Filmsmentioning

confidence: 99%

Engineering Stress in Thin Films: An Innovative Pathway Toward 3D Micro and Nanosystems

Truong

Nguyen

Zhao

et al. 2021

Small

View full text Add to dashboard Cite

Transformation of conventional 2D platforms into unusual 3D configurations provides exciting opportunities for sensors, electronics, optical devices, and biological systems. Engineering material properties or controlling and modulating stresses in thin films to pop‐up 3D structures out of standard planar surfaces has been a highly active research topic over the last decade. Implementation of 3D micro and nanoarchitectures enables unprecedented functionalities including multiplexed, monolithic mechanical sensors, vertical integration of electronics components, and recording of neuron activities in 3D organoids. This paper provides an overview on stress engineering approaches to developing 3D functional microsystems. The paper systematically presents the origin of stresses generated in thin films and methods to transform a 2D design into an out‐of‐plane configuration. Different types of 3D micro and nanostructures, along with their applications in several areas are discussed. The paper concludes with current technical challenges and potential approaches and applications of this fast‐growing research direction.

show abstract

Bending Analysis in AlN-Based Multilayered Piezoelectric Cantilevers

Cited by 4 publications

References 10 publications

Modeling and characterization of piezoelectric beams based on an aluminum nitride thin‐film layer

Modeling and characterization of piezoelectric beams based on an aluminum nitride thin‐film layer

Stress-driven AlN cantilever-based flow sensor for fish lateral line system

Engineering Stress in Thin Films: An Innovative Pathway Toward 3D Micro and Nanosystems

Contact Info

Product

Resources

About