Structural and photoluminescent properties of TiN thin films

Solovan, M. N.; Брус, В. В.; Maryanchuk, P. D.; Фодчук, І. М.; Lorents, V. M.; Sletov, A. M.; Sletov, M. M.; Gluba, Marc A.

doi:10.1134/s0030400x14110198

Cited by 6 publications

(2 citation statements)

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“…The edge-enhanced Raman spectrum is accompanied by fluorescence of TiN that ranges from 2.1 to 3.4 eV. 32 Structural defects of the crystal lattice, including donor states of the nitrogen vacancies, lead to radiative transitions from localized states within the forbidden band. Localized plasmon gap-modes can be easily visualized with the polarized TERS method.…”

Section: Nano Lettersmentioning

confidence: 99%

“…An observable polarization dependence gives convincing evidence for SPP excitation on the resonator edges. The edge-enhanced Raman spectrum is accompanied by fluorescence of TiN that ranges from 2.1 to 3.4 eV . Structural defects of the crystal lattice, including donor states of the nitrogen vacancies, lead to radiative transitions from localized states within the forbidden band.…”

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confidence: 99%

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Nonlinear Raman Effects Enhanced by Surface Plasmon Excitation in Planar Refractory Nanoantennas

et al. 2017

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We consider a nonlinear mechanism of localized light inelastic scattering within nanopatterned plasmonic and Raman-active titanium nitride (TiN) thin films exposed to continuous-wave (cw) modest-power laser light. Owing to the strong third-order nonlinear interaction between optically excited broadband surface plasmons and localized Stokes and anti-Stokes waves, both stimulated and inverse Raman effects can be observed. We provide experimental evidence for coherent amplification of the localized Raman signals using a planar square-shaped refractory antenna.

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Section: Nano Lettersmentioning

confidence: 99%

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confidence: 99%