The effect of annealing on the structural, optical and electrical properties of Titanium Nitride (TiN) thin films prepared by DC magnetron sputtering with supported discharge

Kavitha, A.; Kannan, R.; Reddy, P. Sreedhara; Rajashabala, S.

doi:10.1007/s10854-016-5130-0

Cited by 23 publications

(12 citation statements)

References 26 publications

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“…The lattice constants were found to be 4.18, 4.16, 4.16 and 4.17 There is also a noticeable increase in the number of TiO 2 phases. XRD spectra reveal that the crystal structure of all TiN thin films is face centered cubic (FCC) [18]. The lattice constants of TiN films were calculated using Bragg's equation:…”

Section: Resultsmentioning

confidence: 99%

“…For example, high electrical conductivity of TiN is due to the metallic bonding whereas hardness, high melting point and excellent chemical stability are due to its covalent bonding nature [10,11]. There are several reports on the growth of titanium nitride thin films by chemical vapor deposition (CVD) [12,13], pulsed laser deposition (PLD) [14][15][16], radio frequency (RF) and DC magnetron sputtering [17][18][19][20][21], molecular beam epitaxy (MBE) [22,23], ion beam assisted deposition [24] and atomic layer deposition [25]. TiN is reported to have n-type conductivity and a direct bandgap ranging from 2.7 eV to 4.06 eV.…”

Section: Introductionmentioning

confidence: 99%

“…TiN is reported to have n-type conductivity and a direct bandgap ranging from 2.7 eV to 4.06 eV. Bandgap variation in different reports is due to the difference in the growth conditions such as growth temperature, post growth treatment and N 2 /Ar flux ratio [12,17,18,26].…”

Section: Introductionmentioning

confidence: 99%

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X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

et al. 2021

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Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

et al. 2021

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“…The XRD pattern of the deposited film shows a weak peak at 37°, which can be related to the (111) crystallographic orientations of TiN with a face-centered cubic (FCC) structure (JCPDS card number 02-1159) (Kavitha et al, 2016). It is known that the FCC structure of TiN may form when nitrogen atoms occupy all the octahedral sites of titanium with hexagonal closepacked (HCP) or body-centered cubic (BCC) structures.…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…When the preset total pressure was reached, the nitrogen was shut off, and the target was preset in an argon atmosphere for around 10 min to avoid the target's surface oxide layer. After presputtering, the nitrogen gas was again introduced into the chamber with a flow rate ratio of Ar(90)/N 2 (10), and the sputtering process starts. The sputtering conditions are listed in Table 1.…”

Section: Introductionmentioning

confidence: 99%

MAGNETRON SPUTTERED NANOCRYSTALLINE TiN THIN FILMS AND CORROSION PROPERTIES

Hamil¹,

Khalaf²,

Al-Shakban³

2020

PTQ

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In this report, TiN nanocrystalline thin films were deposited on glass and Ti-6Al-4V substrates using a DC-magnetron sputtering technique. The TiN films were sputtered using a pure Ti target (99.9%) with 40W of power in Ar/N2 gas mixture atmosphere. The structure of the TiN films was characterized by X-Ray diffraction, as prepared films exhibited a (200) preferred orientation, while film annealed at 500 °C shows the (111), (200) and (311). Polycrystalline, cubic, (111)-orientated TiN films were produced by annealing temperature of 500 °C. The effect of deposited temperature on the microstructural morphologies of the thin films was studied by Field Emission Scanning Electron Microscope (FESEM). The particle size of the sputtered TiN films ranged from 50 to 70 nm and was strongly influenced by annealing temperatures, the morphology of the films deposited before and after annealing has a characteristic agglomeration of particles. Potentiodynamic polarization analysis of the TiN films confirms the inverse relationship between polarization resistance and corrosion current. The biocorrosion measurements for TiN films deposited on the Ti-6Al-4V substrate in 3.5% NaCl solution have also been obtained. Clear improvement in the corrosion resistance was observed rather than for untreated, especially for thermally annealed (500 oC) TiN/Ti-6Al-4V samples. The corrosion rate was 0.1458 mm/y for the uncoated sample, while 2.68510-4 mm/y for TiN/Ti-6Al-4V in samples after annealing. The average corrosion potential calculated was - 0.117 V. The results confirmed that coated alloys with 500 °C thermally treated exhibited a better electrochemical behavior compare with uncoated and non-thermally treated alloys possibly due to the better cohesion degree of the coatings.

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High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Gablech

Migliaccio

Brodský

et al. 2023

Adv Elect Materials

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Bioelectronic devices such as neural stimulation and recording devices require stable low‐impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion‐beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion‐beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

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The effect of annealing on the structural, optical and electrical properties of Titanium Nitride (TiN) thin films prepared by DC magnetron sputtering with supported discharge

Cited by 23 publications

References 26 publications

X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films

MAGNETRON SPUTTERED NANOCRYSTALLINE TiN THIN FILMS AND CORROSION PROPERTIES

High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics

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