Structural And Optical Study Of MeV Cobalt Ion Implanted Silicon

Mishra, Pramita; Solanki, Vanaraj; Rath, Ashutosh; Chakraborty, Soumee; Lohani, Himanshu; Sahoo, Pratap K.; Sekhar, B.R.

doi:10.5185/amlett.2014.nib503

Cited by 3 publications

(13 citation statements)

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“…Raman scattering is a potential characterization technique for the distinction of crystalline and amorphous phases in semiconductors by identifying their Raman active lattice modes 25–28 . For silicon, the Raman spectrum is primarily characterized by scattering through Longitudinal Optical (LO) vibrations and Transverse Optical (TO) phonons vibrations corresponding to Brillouin zone center 4,29 . Interestingly for (111) face, scattering by both these modes of brillouin zone center are feasible.…”

Section: Resultsmentioning

confidence: 99%

“…Keeping this in mind, we have explored the structural modifications associated with these LO and TO modes after argon ion irradiation at various oblique incidences 4,28,29 . For Diode pumped laser having incident wavelength of 532 nm, the Raman probing depths are nearly 770 nm and 100 nm in crystalline and amorphous phases of Si(111), respectively 28,29 . Thus, in our case, Raman measurements are majorly dealing with surface and near surface region modifications.…”

Section: Resultsmentioning

confidence: 99%

“…Also, Mishra et al . 29 showed that with increase in ion fluence, the position of a-Si peak shifts to lower wave number and consequent FWHM broadening. Dey 9 et al .…”

Section: Resultsmentioning

confidence: 99%

“…Interestingly, argon ion irradiation induced stress in the irradiated Si(111) results in the shifting of characteristic Raman peak 25,28,29 . We have estimated the induced stress for different off-normal incidences from the shift of the Raman phonon mode present at 521 cm −1 28,29 using the relationHere, σ is the amount of the stress is the peak shift. The calculated stress for different oblique incidences has been plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Nanoscale structural defects in oblique Ar+ sputtered Si(111) surfaces

Gupta

Chawla

Singhal

et al. 2019

Sci Rep

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The present endeavor investigates the controlled surface modifications and evolution of self-assembled nano-dimensional defects on oblique Ar+ sputtered Si(111) surfaces which are important substrates for surface reconstruction. The defect formation started at off-normal incidences of 50° and then deflates into defined defect zones with decrease in oblique incidence, depending strongly on angle of ion incidence. Interestingly, it is observed that mean size & height decreases while average density of these defects increases with decreasing oblique incidence. Non-linear response of roughness of irradiated Si(111) with respect to oblique incidence is observed. Crystalline (c-Si) to amorphous (a-Si) phase transition under oblique argon ion irradiation has been revealed by Raman spectroscopy. Our analysis, thus, shows that high dose argon ion irradiation generates of self-assembled nano-scale defects and surface vacancies & their possible clustering into extended defect zones. Explicitly, ion beam-stimulated mass transport inside the amorphous layers governs the observed defect evolution. This investigation of crystalline (c-Si) coupled with amorphous (a-Si) phases of nano-structured surfaces provides insight into the potential applications in the nano-electronic and optoelectronic devices thus, initiating a new era for fabricating multitude of novel structures.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…Also, Mishra et al . 29 showed that with increase in ion fluence, the position of a-Si peak shifts to lower wave number and consequent FWHM broadening. Dey 9 et al .…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Nanoscale structural defects in oblique Ar+ sputtered Si(111) surfaces

Gupta

Chawla

Singhal

et al. 2019

Sci Rep

View full text Add to dashboard Cite

show abstract

“…The decrease in the grain size is an indication of radiation damage of the crystal structure owing to transfer of 320 J/cm 2 for 4 Â 10 16 -particles/cm 2 . Such reduction in crystallinity due to radiation damage by high particle fluence is a common phenomenon [30].…”

Section: Structural Study Of Pristine and Ion Implanted Thin Filmsmentioning

confidence: 99%