“…Oxide dielectrics have been the subject of numerous investigations for many years due to their possible device integration in a wide range of technologies involving electronics, electro-optics, optoelectronics, and magneto-electronics. − Yttrium oxide (Y 2 O 3 ), a stable oxide of yttrium metal, has received significant attention in recent years in view of its possible integration into a wide range of scientific and technological applications. − Y 2 O 3 films exhibit excellent electronic properties such as transparency over a broad spectral range (0.2–8 μm), high dielectric constant (∼14–18), high refractive index (∼2), large band gap (∼5.8 eV), low absorption (from near-UV to IR), and superior electrical breakdown strength (>3 MV/cm). ,− ,− These properties make Y 2 O 3 films interesting for various electrical and optical devices. − Yttrium oxides were proposed as hosts for rare-earth elements, and efficient thin film phosphors were prepared. − The interface layer formation, however, was detected for several compounds, and structural and chemical parameters of the interface were dependent on the deposition conditions. Therefore, controlled growth and manipulation of microstructure, particularly at the nanoscale dimensions, has important implications for the design and applications of Y 2 O 3 films.…”