Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition

Abstract

Articles you may be interested inElectro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices Appl. Phys. Lett. 102, 013120 (2013); 10.1063/1.4775371Interface and optical properties of In Ga As N Sb ∕ Ga As quantum wells on GaAs (411) Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

“…Specifically, the incorporation of small fractions of antimony (Sb) into GaAs-based materials results in a significant reduction of the band gap 6 7 8 9 , which demonstrates the potential for mid-infrared range of electronic and optoelectronic applications, particularly for edge-emitting lasers 10 and vertical cavity surface emitting lasers (VCSELs) 11 . To be specific, GaAsSb alloy can be applied in data-communication lasers in the range of 1.3–1.5 μm 12 13 14 15 16 17 and GaInAs/GaAsSb multi-quantum well (MQWs) have been used as the gain medium for 2–3 μm type-ІІ MQWs laser 18 . On the other hand, GaAsSb materials can be used for solar cell because their wide light absorption across the wavelength of solar radiation 19 20 21 , and infrared photodetectors applications 22 23 24 .…”

Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers

“…This not only limits the maximum QW number that can be grown without misfit dislocations, but also results in strain-driven in-plane composition fluctuations, which can reduce quantum efficiency and increase inhomogeneous linewidth broadening. The quality of highly strained GaAsSb layers can be improved by adding GaAsP strain compensation layers 2, [13][14][15] near the active region. To date the best performing GaAsSb/ GaAs based edge-emitting lasers ͑EELs͒ and VCSELs have been demonstrated 10,11 using GaAsP strain compensating layers.…”

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

“…However, the material quality of B344 is still very high. High-resolution reciprocal space mapping (RSM) measurements around the symmetric (0 0 4) and asymmetric (2 2 4) were performed, as discussed in more detail elsewhere [7]. B344 QW structure is confirmed to be fully strained while sample B325 corresponds to a partial relaxation QW system of about 30%.…”