Structural and optical properties of SeGe and SeGeX (X=In, Sb and Bi) amorphous films

Fadel, M.; Fayek, S.A.; Abou-Helal, M.O.; Elhaes, Hanan; Shakra, A.M.

doi:10.1016/j.jallcom.2009.06.057

Cited by 86 publications

(40 citation statements)

References 32 publications

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“…cussed according to the Mott and Davis model [23,24] that the width of localized states near the mobility edges depends on the degrees of disorder and defects presented in the amorphous structure. In particular, it is known that unsaturated bonds together with some saturated bonds are produced as a result of an insucient number of atoms deposited in the amorphous lms.…”

Section: Resultsmentioning

confidence: 99%

Validity of Swanepoel's Method for Calculating the Optical Constants of Thick Films

2012

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Optical constants, dispersion and oscillator parameters of dierent thicknesses of amorphous Ge25Cd5Se70 lms have been deposited onto glass substrates using thermal evaporation technique. The optical constants have been investigated by optical spectrophotometry measurements. The straight forward analysis proposed by Swanepoel, which is based on the use of the extremes of the interference fringes has been used in order to derive the refractive index and the lm thickness in µm range. The refractive index could be extrapolated by the Cauchy dispersion relationship over the whole spectral range, which extended from 400 to 2500 nm. It is observed that, refractive index n increases with the lm thickness. The possible optical transition is found to be allowed indirect transition with energy gap increase from 1.915 to 1.975 eV with increasing lm thickness. The dispersion of the refractive index is discussed in terms of the WempleDiDomenico single oscillator model. The interband oscillator wavelength, the average oscillator strength, and the optical conductivity were estimated for dierent thicknesses of amorphous Ge25Cd5Se70 lms.

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Section: Resultsmentioning

confidence: 99%

Validity of Swanepoel's Method for Calculating the Optical Constants of Thick Films

2012

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“…They are attracting an extensive attention due to their practical and potential uses in the civil, medical and military areas, especially in the fields of infrared optics, opto-electronics, photonics, fiber optics and novel memory devices. They also show a continuous change in the physical properties with change of chemical composition [1,2].…”

Section: Introductionmentioning

confidence: 99%

Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

Sakr

Yahia

Fadel

et al. 2010

Journal of Alloys and Compounds

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166

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“…In addition, various crystalline phases have been reported with orthorhombic, cubic, hexagonal, and tetragonal structure, depending on the stoichiometry and the growth methods [2][3][4] . These features make the electrical and optical properties interesting for applications in solar cells 5 , super ionic conductor 6 , optical filters 7 and lasers 8 . The CuSe semiconductor could be a direct gap of 2.2 eV or 1.4 eV indirect 9 .…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Structural, Optical and Electrical Properties of Copper Selenide Thin Films

Thirumavalavan

Mani²,

Sagadevan

2015

Mat. Res.

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Copper selenide (CuSe) thin films were prepared by chemical bath deposition (CBD) method. X-ray diffraction (XRD) analysis was used to study the structure and crystallite size of CuSe thin film. The grain size and the surface morphology were studied using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The optical properties were studied using the UV-Visible transmission spectrum. The dielectric properties of the synthesized CuSe thin films were studied at different frequencies and different temperatures. Further, electronic properties, such as valence electron plasma energy, average energy gap or Penn gap, Fermi energy and electronic polarizability of the CuSe thin films were determined. The AC electrical conductivity study revealed that the conduction depended both on the frequency and the temperature. The temperature dependent conductivity study confirmed the semiconducting nature of the films. Photoconductivity measurements were carried out in order to ascertain the positive photoconductivity of the CuSe Thin films. This paper covers what all has been stated above besides discussing the results of I-V characteristics.

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Structural and optical properties of SeGe and SeGeX (X=In, Sb and Bi) amorphous films

Cited by 86 publications

References 32 publications

Validity of Swanepoel's Method for Calculating the Optical Constants of Thick Films

Validity of Swanepoel's Method for Calculating the Optical Constants of Thick Films

Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

Investigation of the Structural, Optical and Electrical Properties of Copper Selenide Thin Films

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