Copper selenide (CuSe) thin films were prepared by chemical bath deposition (CBD) method. X-ray diffraction (XRD) analysis was used to study the structure and crystallite size of CuSe thin film. The grain size and the surface morphology were studied using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The optical properties were studied using the UV-Visible transmission spectrum. The dielectric properties of the synthesized CuSe thin films were studied at different frequencies and different temperatures. Further, electronic properties, such as valence electron plasma energy, average energy gap or Penn gap, Fermi energy and electronic polarizability of the CuSe thin films were determined. The AC electrical conductivity study revealed that the conduction depended both on the frequency and the temperature. The temperature dependent conductivity study confirmed the semiconducting nature of the films. Photoconductivity measurements were carried out in order to ascertain the positive photoconductivity of the CuSe Thin films. This paper covers what all has been stated above besides discussing the results of I-V characteristics.

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Zinc selenide (ZnSe), zinc sulphide (ZnS) and lead sulphide (PbS) thin films were prepared by chemical bath deposition (CBD) method. In this paper we report results on the photoconductivity behaviour of ZnSe, ZnS and PbS thin films. Photoconductivity measurements were carried out at room temperature by connecting it in series with a picoammeter (Keithley 480) and a dc power supply. Photoconductivity processes may be the most suitable technique for obtaining information about the states in the gap. The thin films showed a significance rise in photocurrent over dark current. The photoconductive studies reveal the positive photoconductive nature of the thin films. Photoconduction includes generation and recombination of carriers and their transport to the electrodes.

Zinc sulphide (ZnS) thin films have been prepared by chemical bath deposition method. X-ray diffraction (XRD) is used to analyze the structure and crystallite size and scanning electron microscopy is used to study the particle size and morphology of ZnS thin film. Optical studies have been carried out using UV-Visible-NIR absorbance spectrum. The band gap value of the film is calculated and it is found to be 3.45 eV. The dielectric properties of ZnS thin films have been studied in the different frequency at different temperatures.