Structural and optical properties of Zn1-xMgxO thin films deposited by ultrasonic spray pyrolysis

Zhang, Xia; Li, Xiao Min; Chen, Tong Lai; Bian, Jiming; Zhang, Can Yun

doi:10.1016/j.tsf.2005.06.088

Cited by 73 publications

(39 citation statements)

References 16 publications

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“…This indicates that In-doping causes the degree of crystallinity of the ZnMgO films to decrease. This phenomenon corresponds to that reported by some referencesin In-doped ZnO [20,23]. Figure 2 shows the surface morphology of AFM images in undoped and In-doped (4 mol%) Zn 0.9 Mg 0.1 O films.…”

supporting

confidence: 87%

“…In recently, many techniques have been employed to produce the high quality hexgonal ZnMgO thin film including molecular beam epitaxy [2][3][4][5], metal organic chemical vapor deposition [6,7], laser ablation [8][9][10][11][12], radio frequency magnetron sputtering [13][14][15][16], sol-gel [1,17,18] and spray pyrolysis [19][20][21][22] methods. The spray pyrolysis method is effective for thin film ZnMgO growth because damage to the surface due to plasma is avoided, high vacuum is not required, and equipments costs are low.…”

mentioning

confidence: 99%

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Optical and electrical characterization of In‐doped ZnMgO films grown by spray pyrolysis method

Yoshino

Oshima

Takemoto

et al. 2009

Phys. Status Solidi (c)

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In‐doped Zn0.9Mg0.1O (0 ∼ 5 mol%) films on glass substrate were successfully grown by a spray pyrolysis method at 500 °C. The c‐axis orientation became weak with increasing indium concentration. This indicated that In‐doping caused the degree of crystallinity of the Zn0.9Mg0.1O films to decrease. Indium atoms could be acted as a donor type impurity because electrical conduction types in the undoped and In‐doped films indicated all n‐types and In‐doping caused the resistivity to decrease and carrier concentration to increase. Furthermore, In‐doping caused the number of nonradiative recombination centers to increase because photoluminescence intensity decreased with increasing indium concentration. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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supporting

confidence: 87%

mentioning

confidence: 99%

Optical and electrical characterization of In‐doped ZnMgO films grown by spray pyrolysis method

Yoshino

Oshima

Takemoto

et al. 2009

Phys. Status Solidi (c)

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“…ZnO nano crystalline structures are attractive due to its superior electronic, optical and magnetic properties and it is used in spinoptoelectronics applications (Wang et al, 2009). ZnO nano crystalline structures can be synthesized by several methods like as RF Magnetron Sputtering (Zhao et al, 2015), pulsed laser deposition (Sharma et al, 1999), ultrasonic spray pyrolysis (Zhang et al, 2005), sol-gel methods (Moon et al, 2013).…”

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confidence: 99%

Effects of Deposition Time on Structural and Morphological Properties of Synthesized ZnO Nanoflowers Without Using Complexing Agent

Temel

Gökmen

Yaman

2017

ESJ

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ZnO nanoflowers have been synthesized by chemical bath deposition technique at different deposition times without using complexing agent, so it is an environmentalist study. Effects of deposition time on structural and morphological properties of ZnO nanoflowers have been investigated by Xray diffraction (XRD) method and Field Emission Scanning Electron Microscope (FESEM). XRD patterns showed that the samples had hexagonal wurtzite structure and polycrystalline nature. Grain sizes, dislocation densities and lattice parameters of the samples have been calculated. According to these results, it has been determined that the ZnO nanoflowers synthesized in very short time like 30 minutes without using complexing agent, showed the best crystallization. When the images of ZnO nanoflowers have been examined, it has seen that the structure is formed continuously and independently from each other by nanorods. It has also seen that these nanorods combine to form a flower-like structure.

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“…64 Spray-pyrolysis can also be used in a continuous process, although the precursors need to be heated to relatively high temperatures. 65 AALD (or spatial ALD) can be upscaled to a continuous roll-to-roll process, and has the distinct advantage of producing uniform, conformal thin films over large areas in openatmosphere at relatively low temperatures of 120-150 • C. 21,22,35 However, AALD is limited by the need to have highly reactive liquid precursors for the metal oxides. These are typically expensive, pyrophoric organometallic precursors.…”

mentioning

confidence: 99%

Research Update: Doping ZnO and TiO2 for solar cells

Hoye¹,

Musselman²,

MacManus‐Driscoll³

2013

APL Materials

103

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ZnO and TiO2 are two of the most commonly used n-type metal oxide semiconductors in new generation solar cells due to their abundance, low-cost, and stability. ZnO and TiO2 can be used as active layers, photoanodes, buffer layers, transparent conducting oxides, hole-blocking layers, and intermediate layers. Doping is essential to tailor the materials properties for each application. The dopants used and their impact in solar cells are reviewed. In addition, the advantages, disadvantages, and commercial potential of the various fabrication methods of these oxides are presented.

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Structural and optical properties of Zn1-xMgxO thin films deposited by ultrasonic spray pyrolysis

Cited by 73 publications

References 16 publications

Optical and electrical characterization of In‐doped ZnMgO films grown by spray pyrolysis method

Optical and electrical characterization of In‐doped ZnMgO films grown by spray pyrolysis method

Effects of Deposition Time on Structural and Morphological Properties of Synthesized ZnO Nanoflowers Without Using Complexing Agent

Research Update: Doping ZnO and TiO2 for solar cells

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