2009
DOI: 10.1002/pssc.200881140
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Optical and electrical characterization of In‐doped ZnMgO films grown by spray pyrolysis method

Abstract: In‐doped Zn0.9Mg0.1O (0 ∼ 5 mol%) films on glass substrate were successfully grown by a spray pyrolysis method at 500 °C. The c‐axis orientation became weak with increasing indium concentration. This indicated that In‐doping caused the degree of crystallinity of the Zn0.9Mg0.1O films to decrease. Indium atoms could be acted as a donor type impurity because electrical conduction types in the undoped and In‐doped films indicated all n‐types and In‐doping caused the resistivity to decrease and carrier concentrati… Show more

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