Structural and electronic properties of Pt induced nanowires on Ge(110)

Zhang, Lijie; Bampoulis, Pantelis; Safaei, Ali; Zandvliet, Henricus J.W.

doi:10.1016/j.apsusc.2016.06.175

Cited by 7 publications

(10 citation statements)

References 39 publications

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“…Often nanowires form in these grooves, making them invisible. 23,32 For Ge(100) samples, we found that the shape of the etched pits was square as can be seen in the supplementary material (Fig. 4).…”

Section: A Hut Cluster Characterizationmentioning

confidence: 60%

“…During heating, molten droplets of Ge-Pt move across the surface of the sample. 23 Upon cooling, the droplets solidify and form crystalline clusters on the surface. It has been proposed that upon cooling, the droplets undergo a decomposition into a Ge 2 Pt phase and a pure Ge phase as deduced from the phase diagram.…”

Section: Methodsmentioning

confidence: 99%

“…It has been proposed that upon cooling, the droplets undergo a decomposition into a Ge 2 Pt phase and a pure Ge phase as deduced from the phase diagram. 23 Except for the STM measurements, the samples are exposed to ambient conditions when they are transferred to the different systems.…”

Section: Methodsmentioning

confidence: 99%

“…From previous results, we know that this is the Ge(110) plane. 23 In the cluster, this corresponds to the Ge 2 Pt(100) plane. The X-direction corresponds to a Ge{100} plane of the substrate, which we know is the Ge(001) plane.…”

Section: A Hut Cluster Characterizationmentioning

confidence: 99%

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Ge2Pt hut clusters: A substrate for germanene

Bremen

Bampoulis

Aprojanz

et al. 2018

Journal of Applied Physics

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The formation and structure of Ge 2 Pt clusters was studied in order to understand their germanene termination layer. The Ge 2 Pt clusters are formed by depositing a few layers of Pt on a Ge(110) surface. Annealing at temperatures above 1043 K results in eutectic Ge-Pt droplets that etch grooves on the surface in the [110] direction. Upon cooling down, they solidify and decompose into a Ge 2 Pt phase and a pure Ge phase. Electron diffraction reveals that the hut-shaped clusters have their (001) plane oriented parallel to the Ge(110) surface and their (100) plane facing in the Ge[110] direction. The facets of the Ge 2 Pt hut clusters have been determined to be the {101} and {011} planes. The germanene layers which cover these facets are commensurate with the {101} and {011} facets of the Ge 2 Pt substrate.

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Section: A Hut Cluster Characterizationmentioning

confidence: 60%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: A Hut Cluster Characterizationmentioning

confidence: 99%

See 2 more Smart Citations

Ge2Pt hut clusters: A substrate for germanene

Bremen

Bampoulis

Aprojanz

et al. 2018

Journal of Applied Physics

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“…The size of the domains must be small compared to the transfer width of the instrument used (several tens of nm) as we conclude from the extinct (0, ±1) peaks in the (2 × 1) diffraction pattern. The distance between two neighboring [-110] Pt chains is 1.12 nm, i.e., exactly equal to the minimum distance between Pt induced nanowires [21]. We now return to Fig.…”

Section: Resultsmentioning

confidence: 88%

Shining new light on the motion of eutectic droplets across surfaces: A PEEM study of PtGe on Ge(110)

Poelsema

Zhang

Solomon

et al. 2021

Phys. Rev. Materials

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Thermally stimulated motion of micron-sized eutectic PtGe droplets on Ge(110) has been studied in situ mainly by photoemission electron microscopy, low-energy electron microscopy, and spatially resolved lowenergy electron diffraction. In line with earlier studies of eutectic AuSi, PtSi, AuGe, and PtGe clusters on, respectively, various Si and Ge substrates we find that the motion toward regions at higher temperature is driven by the entropy gain of substrate atoms which become constituents of the droplet during its journey. At ∼1100 K, i.e., well above the bulk eutectic temperature, the direction is governed solely by the local thermal gradient, irrespective of eventual crystalline preferences. Access to the diffusivity of the host material (in this case Ge) inside the eutectic droplets shows that this is well above one order of magnitude higher than expected if it was rate limiting for the velocity of the moving droplets. This excludes a significant gradient of the (Ge) concentration inside the droplet and disqualifies dissolution-diffusion-deposition flow as the driving force for motion of the droplets on the surface, as assumed widely hitherto, to explain surface diffusion of eutectic droplets on surfaces. In addition, the interface between the droplet and the surface appears flat and we find no indication for "endotaxy." The droplets make direct contact with the flat Ge substrate through atomic steps, which are abundantly present at the interface. The droplets are surrounded by a PtGe 3 wetting layer with an ordered (2 × 1) structure. Dissolution of the edges of the wetting layer at the leading edge of the droplet with an activation energy of 2.2 eV is identified as the rate limiting step for its motion.

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