The Au modified Ge(1 1 0) surface

Zhang, L.; Kabanov, N.S.; Bampoulis, Pantelis; Saletsky, A. M.; Zandvliet, Henricus J.W.; Klavsyuk, A. L.

doi:10.1016/j.apsusc.2018.01.004

Cited by 7 publications

(1 citation statement)

References 35 publications

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“…Owing to this complexity, the surface structure of the reconstructed Ge(110) have not yet been fully understood. Understanding local structural order and disorder on semiconductors is important for a number of processes, such as the growth of metal nanostructures − as well as the influence of the surface disorder on the material’s electronic properties. , This is important because due to disorder, charge carriers can become strongly localized, influencing the local density of states and the material’s response to external stimuli, such as strain, electric field, adsorbates, etc. − For example, when an electric field is applied in strongly localized electron systems, charge carriers hop between localized states from one randomly scattered location (e.g., dopant atom) to the other, − resulting in non-linear responses and high resistivities.…”

Section: Introductionmentioning

confidence: 99%

Charge Localization Induced by Pentagons on Ge(110)

et al. 2022

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The Ge(110) surface reconstructs into ordered and disordered phases, in which the basic unit is a five-membered ring of Ge atoms (pentagon). The variety of surface reconstructions leads to a rich electronic density of states with several surface states. Using scanning tunneling microscopy and spectroscopy, we have identified the exact origins of these surface states and linked them to either the Ge pentagons or the underlying Ge–Ge bonds. We show that even moderate fluctuations in the positions of the Ge pentagonal units induce large variations in the local density of states. The local density of states modulates in a precise manner, following the geometrical constraints on tiling Ge pentagons. These geometry-correlated electronic states offer a vast configurational landscape that could provide new opportunities in data storage and computing applications.

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Section: Introductionmentioning

confidence: 99%

Charge Localization Induced by Pentagons on Ge(110)

et al. 2022

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Reversible lewisite adsorption/desorption on the transition-metal-doped graphene: first-principle calculations

Liu

Holiharimanana

et al. 2023

Res Chem Intermed

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Arsenical compound lewisite was developed to be a potent chemical warfare agent in the blister agent class and was abandoned in the war areas. Exposure to lewisite can cause serious damage to human's skin, eyes and respiratory tract. Therefore, it is essential for scienti c researchers to design materials that can detect and remove the abandoned lewisite e ciently. In the present work, the potential of transition metals doped (TM = Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn) graphene (TM/G) to eliminate lewisite is investigated by the rst-principles calculations based on density functional theory. The adsorption geometry, adsorption energy, charge transfer, density of states and UV spectra of adsorption system of lewisite on TM/G (L@TM/G)are calculated and analyzed. Computational results demonstrate that there is a strong chemical interaction between TM/G substrate and lewisite molecule. More importantly, the adsorption of lewisite on TM/G can be regulated by introducing an electric eld with proper direction and intensity, and therefore the reversible adsorption/desorption can be achieved. In addition, the electronic and optical properties of TM/G change signi cantly after lewisite adsorption, making TM/G promising to detect lewisite agent. The work predicts that TM/G is a potential sensor and renewable adsorbent for lewisite.

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Symmetry breaking induced bandgap opening in epitaxial germanene on WSe2

Tagani

Tian

et al. 2022

Applied Physics Letters

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Germanene has attracted much attention because the material was predicted to host Dirac fermions. However, the synthesis of germanene is still in its infancy; moreover, the predicted tiny bandgap induced by the spin–orbit coupling is far from practical applications for nanoelectronic devices. Herein, quasi-freestanding germanene with linear dispersion relation of the band structure is well grown on a WSe2/Au(100) substrate. Band structure calculations reveal that the interaction of germanene with the substrate destroys the sublattice symmetry. The energy-dependent contribution of σ orbitals responsible for band crossing at the Fermi level around the Γ point induces asymmetric density of states at the Dirac point. Upon annealing in ultra-high vacuum, we observe a bandgap opening in germanene of about ∼0.17 eV, which is attributed to a sublattice symmetry breaking in germanene and the emergence of a net electric field. This work provides an effective method to tune or tailor the electronic properties of germanene, paving the way to germanene-based field-effect applications.

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The Au modified Ge(1 1 0) surface

Cited by 7 publications

References 35 publications

Charge Localization Induced by Pentagons on Ge(110)

Charge Localization Induced by Pentagons on Ge(110)

Reversible lewisite adsorption/desorption on the transition-metal-doped graphene: first-principle calculations

Symmetry breaking induced bandgap opening in epitaxial germanene on WSe2

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The Au modified Ge(1 1 0) surface

Cited by 7 publications

References 35 publications

Charge Localization Induced by Pentagons on Ge(110)

Charge Localization Induced by Pentagons on Ge(110)

Reversible lewisite adsorption/desorption on the transition-metal-doped graphene: first-principle calculations

Symmetry breaking induced bandgap opening in epitaxial germanene on WSe2

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Product

Resources

About

The Au modified Ge(1 1 0) surface