Recently, several research groups have reported the growth of germanene, a new member of the graphene family. Germanene is in many aspects very similar to graphene, but in contrast to the planar graphene lattice, the germanene honeycomb lattice is buckled and composed of two vertically displaced sub-lattices. Density functional theory calculations have revealed that free-standing germanene is a 2D Dirac fermion system, i.e. the electrons behave as massless relativistic particles that are described by the Dirac equation, which is the relativistic variant of the Schrödinger equation. Germanene is a very appealing 2D material. The spin-orbit gap in germanene (~24 meV) is much larger than in graphene (<0.05 meV), which makes germanene the ideal candidate to exhibit the quantum spin Hall effect at experimentally accessible temperatures. Additionally, the germanene lattice offers the possibility to open a band gap via for instance an externally applied electrical field, adsorption of foreign atoms or coupling with a substrate. This opening of the band gap paves the way to the realization of germanene based field-effect devices. In this topical review we will (1) address the various methods to synthesize germanene (2) provide a brief overview of the key results that have been obtained by density functional theory calculations and (3) discuss the potential of germanene for future applications as well for fundamentally oriented studies.

Understanding the electronic contact between molybdenum disulfide (MoS2) and metal electrodes is vital for the realization of future MoS2-based electronic devices. Natural MoS2 has the drawback of a high density of both metal and sulfur defects and impurities. We present evidence that subsurface metal-like defects with a density of ∼1011 cm–2 induce negative ionization of the outermost S atom complex. We investigate with high-spatial-resolution surface characterization techniques the effect of these defects on the local conductance of MoS2. Using metal nanocontacts (contact area < 6 nm2), we find that subsurface metal-like defects (and not S-vacancies) drastically decrease the metal/MoS2 Schottky barrier height as compared to that in the pristine regions. The magnitude of this decrease depends on the contact metal. The decrease of the Schottky barrier height is attributed to strong Fermi level pinning at the defects. Indeed, this is demonstrated in the measured pinning factor, which is equal to ∼0.1 at defect locations and ∼0.3 at pristine regions. Our findings are in good agreement with the theoretically predicted values. These defects provide low-resistance conduction paths in MoS2-based nanodevices and will play a prominent role as the device junction contact area decreases in size.

We have investigated the growth of Pt on Ge(110) using scanning tunneling microscopy and spectroscopy. The deposition of several monolayers of Pt on Ge(110) followed by annealing at 1100 K results in the formation of three-dimensional metallic Pt-Ge nanocrystals. The outermost layer of these crystals exhibits a honeycomb structure. The honeycomb structure is composed of two hexagonal sub-lattices that are displaced vertically by 0.2 Å with respect to each other. The nearest-neighbor distance of the atoms in the honeycomb lattice is 2.50.1 Å, i.e. very close to the predicted nearest-neighbor distance in germanene (2.4 Å). Scanning tunneling spectroscopy reveals that the atomic layer underneath the honeycomb layer is more metallic than the honeycomb layer itself. These observations are in line with a model recently proposed for metal di-(silicides/)germanides: a hexagonal crystal with metal layers separated by semiconductor layers with a honeycomb lattice. Based on our observations we propose that the outermost layer of the Ge2Pt nanocrystal is a germanene layer. Keywords: germanene, platinum, germaniumIn 2004 Novoselov and Geim [1] ignited a revolution in materials science by preparing graphene, i.e. a single layer of sp 2 hybrizided carbon atoms. The unique electronic structure of this archetype 2D material has led to a large number of exciting physical discoveries [2][3][4]. Shortly after this discovery it has been suggested that two-dimensional sheets of other group IV elements, such as Si [5,6] and Ge [6], might exhibit similar properties as graphene. Already in 1994 Takeda and Shiraishi [7] performed quantum mechanical ab initio calculations on planar silicon and germanium structures that have the graphite structure. They pointed out that the lowest energy configuration was obtained if the two atoms of the honeycomb are slightly displaced with respect to each other in a direction normal to the planar structure. Their calculations also revealed that these buckled Si and Ge structures exhibited semimetallic properties. Unfortunately, they did not pay any attention to the exact k-dependence of the energy dispersion relations in the vicinity of the Fermi level. More than a decade later Guzmán-Verri and Lew Yan Voon [5] showed, using tight binding calculations, that a 2D silicon sheet with the graphite structure has Dirac cones. Hence the electrons in these 2D 2 silicon sheets behave as massless Dirac fermions. The Si and Ge analogues of graphene are referred to as silicene and germanene, respectively. First-principles calculations by Cahangirov et al. [6] revealed that a single sheet of germanium atoms with a honeycomb structure is also stable. The free-standing Ge honeycomb lattice is not fully planar, but buckled. The two hexagonal sub-lattices of the honeycomb lattice are displaced vertically by 0.64 Å, which is slightly larger than the buckling in silicene (0.44 Å). The buckling results into a weaker  bonding and the perpendicular pz orbital hybridizes with the in-plane orbitals.Similar to graphene...

To date germanene has only been synthesized on metallic substrates. A metallic substrate is usually detrimental for the two-dimensional Dirac nature of germanene because the important electronic states near the Fermi level of germanene can hybridize with the electronic states of the metallic substrate. Here we report the successful synthesis of germanene on molybdenum disulfide (MoS2), a band gap material. Pre-existing defects in the MoS2 surface act as preferential nucleation sites for the germanene islands. The lattice constant of the germanene layer (3.8 ± 0.2Å) is about 20% larger than the lattice constant of the MoS2 substrate (3.16Å). Scanning tunneling spectroscopy measurements and density functional theory calculations reveal that there are, besides the linearly dispersing bands at the K points, two parabolic bands that cross the Fermi level at the Γ point. The discovery that graphene, a single layer of sp 2 hybridized carbon atoms arranged in a honeycomb registry, is stable has resulted in numerous intriguing and exciting scientific breakthroughs [1,2]. The electrons in graphene behave as relativistic massless fermions that are described by the Dirac equation, i.e. the relativistic variant of the Schrödinger equation. One might anticipate that elements with a similar electronic configuration, such as silicon (Si), germanium (Ge) and tin (Sn), also have a "graphene-like" allotrope. Unfortunately, silicene (the silicon analogue of graphene), germanene (the germanium analogue of graphene) and stanene (the tin analogue of graphene) have not been found in nature and therefore these two-dimensional (2D) materials have to be synthesized. Theoretical calculations have revealed that the honeycomb lattices of the "graphene-like" allotropes of silicon and germanium are not fully planar, but slightly buckled [3,4]. The honeycomb lattices of these 2D materials consist of two triangular sub-lattices that are slightly displaced with respect to each other in a direction normal to the honeycomb lattice. Despite this buckling the 2D Dirac nature of the electrons is predicted to be preserved [3,4]. Another salient difference with graphene is that silicene and germanene have a substantially larger spin-orbit gap than graphene (<0.05 meV). Silicene's spin-orbit gap is predicted to be 1.55 meV, whereas the predicted spin-orbit gap of germanene is even 23.9 meV. This is very interesting because graphene and also silicene and germanene are in principle 2D topological insulators and thus ideal candidates to exhibit the quantum spin Hall effect. The interior of a 2D topological insulator exhibits a spin-orbit gap, whereas topologically protected helical edge modes exist at the edges of the material [5,6]. The two topologically protected spin-polarized edge modes have opposite propagation directions and therefore the charge conductance vanishes, whereas the spin conductance has a non-zero value.In the past few years various groups have successfully synthesized silicene [7][8][9] and germanene [10-13] on a variety of substrates. T...

Understanding the electron transport through transition-metal dichalcogenide (TMDC)-based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-)electronic devices. Despite the bonding in TMDCs being largely constrained within the layers, strong Fermi-level pinning (FLP) was observed in TMDC-based devices, reducing the tunability of the Schottky barrier height. We present evidence that metal-induced gap states (MIGS) are the origin for the large FLP similar to conventional semiconductors. A variety of TMDCs (MoSe2, WSe2, WS2, and MoTe2) were investigated using high-spatial-resolution surface characterization techniques, permitting us to distinguish between defected and pristine regions. The Schottky barrier heights on the pristine regions can be explained by MIGS, inducing partial FLP. The FLP strength is further enhanced by disorder-induced gap states induced by transition-metal vacancies or substitutionals at the defected regions. Our findings emphasize the importance of defects on the electron transport properties in TMDC-based devices and confirm the origin of FLP in TMDC-based metal/semiconductor junctions.