Structural and electronic properties of SnO2

Akgül, Funda Aksoy; Gümüş, C.; Er, Ali; Farha, Ashraf Hassan; Akgül, Güvenç; Ufuktepe, Y.; Liu, Zhi

doi:10.1016/j.jallcom.2013.05.057

Cited by 139 publications

(65 citation statements)

References 52 publications

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“…All of the observed peaks were experimentally in agreement with the reference database [33] and accompanied by spin-orbit doublets. For the Sn species, 3d 5/2 and 3d 3/2 splitting values in the range of 8.4´8.7 eV were in close agreement with the literature values [36] and for Zn species, Zn2p 3/2 and Zn2p ½ splitting values in the range of 23.0´23.1 eV, which were also in close agreement with the literature values [37]. Figure 4D shows the relative binding energies of the Zn 2p 3/2 and Sn 3d 5/2 peaks; the lack of significant variance in the value suggests that no significant band bending is likely to be occurring.…”

Section: X-ray Photoelectron Spectroscopysupporting

confidence: 90%

Gas Sensing Studies of an n-n Hetero-Junction Array Based on SnO2 and ZnO Composites

2016

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Abstract:A composite metal oxide semiconductor (MOS) sensor array based on tin dioxide (SNO 2 ) and zinc oxide (ZnO) has been fabricated using a straight forward mechanical mixing method. The array was characterized using X-ray photoelectron spectroscopy, scanning electron microscopy, Raman spectroscopy and X-ray diffraction. The array was evaluated against a number of environmentally important reducing and oxidizing gases across a range of operating temperatures (300-500˝C). The highest response achieved was against 100 ppm ethanol by the 50 wt% ZnO-50 wt% SnO 2 device, which exhibited a response of 109.1, a 4.5-fold increase with respect to the pure SnO 2 counterpart (which displayed a response of 24.4) and a 12.3-fold enhancement with respect to the pure ZnO counterpart (which was associated with a response of 8.9), towards the same concentration of the analyte. Cross sensitivity studies were also carried out against a variety of reducing gases at an operating temperature of 300˝C. The sensors array showed selectivity towards ethanol. The enhanced behaviour of the mixed oxide materials was influenced by junction effects, composition, the packing structure and the device microstructure. The results show that it is possible to tune the sensitivity and selectivity of a composite sensor, through a simple change in the composition of the composite.

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Section: X-ray Photoelectron Spectroscopysupporting

confidence: 90%

Gas Sensing Studies of an n-n Hetero-Junction Array Based on SnO2 and ZnO Composites

2016

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“…6(b). The deconvoluted O 1s spectra from low to high binding energy were assigned to Sn-O, Sn-O 2 , and Surf-O centered at 530.06 ± 0.05, 531.44 ± 0.04, and 532.46 ± 0.03 eV, respectively [24]. The electrical properties of the Sn nitride films were investigated with the 4-point probe method.…”

Section: Resultsmentioning

confidence: 99%

Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

Choi¹,

Kang²,

Park³

et al. 2014

Thin Solid Films

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“…Os valores calculados dos band gaps fundamentais estão listado na tabela 2. [21] 3,50 [22] 3,1 [23] 3,6-4,2 [24] LDA Os potencias LDA, GGA-PBEsol e BJ subestimaram bastante os valores band gaps quando comparado aos experimentais, (tabela 2). Este fato já é bem conhecido na literatura, e verificado aqui neste trabalho.…”

Section: -Resultados E Discussõesunclassified

“…Os cálculos de estruturas eletrônicas (estrutura de bandas) calculada com os potenciais LDA, GGA-PBEsol, BJ, mBJ original, mBJ P-presente e mBJ P-semicondutores descreveram a natureza dos band gaps em acordo com os experimentais [21][22][23][24] e teóricos [12][13][14][15][16][17][18][19][20]. Os gaps fundamentais são classificados como diretos (Γ→Γ), em todos os cálculos.…”

Section: -Conclusãounclassified

Uma avaliação dos potencias LDA, GGA-PBEsol, BJ, mBJ original, mBJ P-presente e mBJ P-semicondutor em cálculos dos band gaps dos semicondutores: ZnO, GaN, TiO2 e SnO2 utilizando a teoria funcional da densidade

Sousa

Melo²,

Freitas³

2017

Sci. Plena

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Este trabalho apresenta uma avaliação dos potenciais LDA, GGA-PBEsol, BJ, mBJ original, mBJ P-presente e mBJ P-semicondutor em cálculos dos band gaps dos semicondutores ZnO, GaN, TiO2 e SnO2 utilizando o formalismo da Teoria Funcional da Densidade (DFT). O objetivo de utilizar diferentes potenciais é avaliar qual destes descreve em acordo com o experimental tanto os valores quanto a natureza dos band gaps dos semicondutores. Nos cálculos das estruturas eletrônicas (estrutura de bandas), estes potenciais descreveram em pleno acordo com os experimentais a natureza direta → dos band gaps destes compostos. No entanto, o potencial mBJ P-semicondutor foi o único que descreveu em concordância com o experimental os valores dos gaps. Os valores calculados dos gaps com o potencial mBJ P-semicondutores foram de 3,37 eV (ZnO), 3,48 eV (GaN), 3,06 eV (TiO2) e 3,80 eV (SnO2), os quais concordam com valores experimentais.

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Structural and electronic properties of SnO2

Cited by 139 publications

References 52 publications

Gas Sensing Studies of an n-n Hetero-Junction Array Based on SnO2 and ZnO Composites

Gas Sensing Studies of an n-n Hetero-Junction Array Based on SnO2 and ZnO Composites

Tin nitride thin films fabricated by reactive radio frequency magnetron sputtering at various nitrogen gas ratios

Uma avaliação dos potencias LDA, GGA-PBEsol, BJ, mBJ original, mBJ P-presente e mBJ P-semicondutor em cálculos dos band gaps dos semicondutores: ZnO, GaN, TiO2 e SnO2 utilizando a teoria funcional da densidade

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