“…ZnO is a superior wide band gap semiconducting material for manufacturing optoelectronic devices. − Although the optical band gap of ZnO is wide enough for fabricating window layer solar cells, liquid crystal displays, heat mirrors, and other optoelectronic device applications, there are some other devices such as high brightness white and UV LED, laser diodes, UV photodetector, and so forth which require much lower band gaps than that of ZnO . Furthermore, lower band gap materials are also required to realize the core-barrier layer, core-cladding layer, and quantum well structures in optoelectronic and photonic applications. , The other major challenge faced by researchers is the non-availability of efficient p-type dopants for ZnO, which is considered as the vital building block for any quantum well-based optoelectronic device. , The main hindrance in attaining p-type doping arises due to the amalgamation of the self-compensating effect with low solubility of the acceptors . Many researchers have reported p-type behavior in ZnO by using group-IA elements, which substitutes Zn crystallite sites in the lattice and group V elements, which substitutes the O sites .…”