Structural and electrical studies of template synthesized copper nanowires

Kumar, Nikhil; Kumar, Rajesh; Kumar, Sushil; Chakarvarti, S. K.

doi:10.1016/j.cap.2014.09.007

Cited by 16 publications

(12 citation statements)

References 36 publications

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“… 5 , 6 The other major challenge faced by researchers is the non-availability of efficient p-type dopants for ZnO, which is considered as the vital building block for any quantum well-based optoelectronic device. 7 , 8 The main hindrance in attaining p-type doping arises due to the amalgamation of the self-compensating effect with low solubility of the acceptors. 9 Many researchers have reported p-type behavior in ZnO by using group-IA elements, which substitutes Zn crystallite sites in the lattice and group V elements, which substitutes the O sites.…”

Section: Introductionmentioning

confidence: 99%

“…ZnO is a superior wide band gap semiconducting material for manufacturing optoelectronic devices. − Although the optical band gap of ZnO is wide enough for fabricating window layer solar cells, liquid crystal displays, heat mirrors, and other optoelectronic device applications, there are some other devices such as high brightness white and UV LED, laser diodes, UV photodetector, and so forth which require much lower band gaps than that of ZnO . Furthermore, lower band gap materials are also required to realize the core-barrier layer, core-cladding layer, and quantum well structures in optoelectronic and photonic applications. , The other major challenge faced by researchers is the non-availability of efficient p-type dopants for ZnO, which is considered as the vital building block for any quantum well-based optoelectronic device. , The main hindrance in attaining p-type doping arises due to the amalgamation of the self-compensating effect with low solubility of the acceptors . Many researchers have reported p-type behavior in ZnO by using group-IA elements, which substitutes Zn crystallite sites in the lattice and group V elements, which substitutes the O sites .…”

Section: Introductionmentioning

confidence: 99%

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Sol–Gel-Derived Cu-Doped ZnO Thin Films for Optoelectronic Applications

Joshi

Chaudhri²

2022

ACS Omega

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Pristine and Cu-doped ZnO thins films were deposited on Si(100) and quartz substrates by the sol–gel method, followed by post annealing at 450 °C. Structural analysis shows that all grown films are polycrystalline in nature and the crystallite size of the doped film increases with the doping concentration. Narrowing of the band gap is seen with Cu doping, and electrical analysis shows an increase in the conductivity and carrier concentration with Cu doping. As compared to pristine ZnO, Cu-doped thin films show p-type conductivity with a maximum carrier concentration of 1.34 × 10 15 cm –3 for 6% doping at room temperature. The p-type conductivity in these films easily degraded with time, which may be due to the interaction of films with ambient conditions or may be due to the diffusion of indium inside the material. After 15 days, ambient-exposed films were totally converted into n-type, whereas the vacuum-placed film still shows p-type behavior with good mobility. This study shows that sol–gel-derived Cu-doped thin films show low electrical resistivity, p-type conductivity, and high transmittance and can be used for optoelectronics devices if these films were well prepared, protected, and properly passivated.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sol–Gel-Derived Cu-Doped ZnO Thin Films for Optoelectronic Applications

Joshi

Chaudhri²

2022

ACS Omega

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“…where 'β' is in radians and indicates the broadening of diffraction line measured at half of its maximum intensity (FWHM), λ (=1.5418 Å) shows the wavelength of X-rays, θ is the angle of diffraction and K is the shape factor. For polycrystalline film, value of K is 0.9 [27]. In figure 3(b), the variation in sizes of grains (average) versus fluence of Ar + ions is shown.…”

Section: Resultsmentioning

confidence: 99%

“…The coulomb force of attraction will originate between nuclei of materials and electronic cloud will cause electronic cloud to oscillate with respect to nuclei. The effect of oscillations of electronic cloud or conduction band electrons collectively on NWs' surfaces is called surface plasmonic resonance effect [18,27].…”

Section: Resultsmentioning

confidence: 99%

“…As seen from spectra in figures 4(a)-(c), optical transmittance is less in the region of 374 nm which ultraviolet (UV) region of ultraviolet-visible (UV-vis) spectrum and absorption of light is strong in this area which may be attributed to effect of surface plasmonic resonance. If the dimension of nickel wires is in nanometer scale, absorbance band normally appear in UV precinct of UV-Visible spectra because of interaction of electromagnetic field will interact with conduction band electron in this band which arises effect of surface plasmonic resonance [27,28]. In this band, transmittance of light is reduced and scattering and absorption of light in UV region is increased.…”

Section: Resultsmentioning

confidence: 99%

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Modification in properties of Ni-NWs meshes by Ar⁺ ions beam irradiation

Honey

Asim

Ahmad

et al. 2020

Mater. Res. Express

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Influence of 30 kilo-electron-volt (keV) Argon (Ar + ) ions on optical and electrical properties of nickel nanowires (Ni-NWs) meshes is being reported. Ni-NWs are being exposed to 30 keV Argon (Ar + ) ions at various beam fluencies. These fluencies of Ar + ions are 7×10 14 ions cm −2 , 3×10 15 ions cm −2 and 3×10 16 ions cm −2 . After irradiation, Ni-NWs meshes were analyzed through transmission electron microscopy technique (TEM). The structural analysis has been done through X-ray diffraction technique. It is found from TEM results that atoms are sputtered out from surfaces of Ni-NWs due to collision cascade effect persistently and lead to reduce the diameters or thicknesses of Ni-NWs. X-ray diffraction results reveal that crystalline quality is reduced under Ar + ions irradiation which may be due to defects induced in Ni-NWs as a result of collision cascade effect. The Ni-NWs meshes are characterized optically and electrically through UV-VIS spectroscopy and four probe techniques. The optical transparencies of Ni-NWs meshes are increasing with increase in beam fluence of Ar + ions. The electrical conductivity of the mesh is decreased continuously with increment in beam fluence of Ar + ions which might be due to production of defects in Ni-NWs. The tuning of optical transparency and electrical conductivity of Ni-NWs meshes is required for their application as successful transparent electrodes in optoelectronic nanodevices.

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