Structural and electrical characteristics of copper indium disulfide thin film

Park, G.C.; Yoo, Y.T.; Lee, J.

doi:10.1016/0379-6779(94)03033-3

Cited by 10 publications

(4 citation statements)

References 3 publications

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“…The grain size of the crystals in the undoped and Sb-doped thin films annealed at 400 C was approximately 0.2-0.4 and 0.8-1.0 m, respectively, with the grain size of the Sb-doped CuInS 2 crystals larger than that of the undoped CuInS 2 crystals as well as Sb-doped CuInSe 2 , 17) and Cu(In,Ga)Se 2 [19][20][21] thin films. The observed grain size of the Sb-doped CuInS 2 crystals prepared by the present method was smaller than that reported for undoped CuInS 2 crystals prepared by electron beam evaporation 22) and chemical vapor deposition. 23)…”

Section: Resultscontrasting

confidence: 76%

Effect of H₂S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation

Akaki

Yamazumi

Nakamura

et al. 2012

Jpn. J. Appl. Phys.

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We consider (3 + 1)-dimensional SU(N )/Z N Yang-Mills theory on a spacetime with a compact spatial direction, and prove the following result: Under a continuous increase of the theta angle θ → θ + 2π, a 't Hooft operator T (γ) associated with a closed spatial curve γ that winds around the compact direction undergoes a monodromy T (γ) → T (γ). The new 't Hooft operator T (γ) transforms under large gauge transformations in the same way as the product T (γ)W (γ), where W (γ) is the Wilson operator associated with the curve γ and the fundamental representation of SU(N ).

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Section: Resultscontrasting

confidence: 76%

Effect of H₂S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation

Akaki

Yamazumi

Nakamura

et al. 2012

Jpn. J. Appl. Phys.

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“…Ternary chalcopyrite semiconductors ABX 2 (A = Cu, Ag; B = Al, In, Ga; X = S, Se, Te) show considerable technological potential for a wide variety of optoelectronic device applications [1][2][3]. Of all the ABX 2 chalcopyrites which make use of alternative or clean energy, CuInS 2 has been receiving considerable attention as a photovoltaic conversion device [4,5]. Its band gap of about 1.5 eV is almost the optimum for the photovoltaic conversion of solar energy (note that the band gap is close to that of GaAs).…”

Section: Introductionmentioning

confidence: 99%

Effect of deposition temperature on the optical and structural properties of as-deposited CuInS₂films

Kanzari

Rezig

2000

Semicond. Sci. Technol.

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Structural and optical properties of thin films CuInS 2 grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The depositions were carried out at substrate temperatures in the range 65-295 • C. We obtain CuInS 2 layers with high structural quality by growing at T s ≈ 140 • C with the presence of an amorphous component and at T s ≈ 240 • C with formation of In and Cu 7 In 4 as minority phases. From the optical transmission and reflection an optical absorption coefficient of 3 × 10 4 -10 5 cm −1 for λ < 1000 nm was calculated for the films deposited at T s > 200 • C. Analysis of the absorption coefficient data revealed the existence of several energy gaps, direct and forbidden direct gaps. The direct gaps lie between 1.38 and 2.20 eV and the forbidden direct gaps are in the 0.61-1.97 eV range. The effect of the substrate temperatures on the grain size and surface roughness has been studied. It has been shown that the substrate temperatures T s ≈ 140 • C and T s ≈ 240 • C yield maxima of the grain size and minima of the surface roughness.

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“…The grain sizes of CuInS 2 particles increase with increasing annealing temperature. The grain size in the non-doped films grown by this method is almost the same as films grown by electron beam evaporation and CVD methods [18,19].…”

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confidence: 90%

Structural, electrical and optical properties of Bi‐doped CuInS ₂ thin films grown by vacuum evaporation method

Akaki

Matsuo

Yoshino

2006

Phys. Status Solidi (c)

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Structural, electrical and optical properties of Bi-doped CuInS 2 thin films prepared by a single-source thermal evaporation method were investigated. The as-deposited films were annealed in the temperature range between 100 and 500 °C for 10 min in air. The film of chalcopyrite CuInS 2 single phase was obtained by annealing at 200 °C successfully. It was found that Bi atoms enhanced the growth of CuInS 2 single phase at lower temperature. Furthermore, the crystalline quality of doped films was higher compared with the non-doped ones.

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Structural and electrical characteristics of copper indium disulfide thin film

Cited by 10 publications

References 3 publications

Effect of H₂S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation

Effect of H₂S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation

Effect of deposition temperature on the optical and structural properties of as-deposited CuInS₂films

Structural, electrical and optical properties of Bi‐doped CuInS ₂ thin films grown by vacuum evaporation method

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Structural and electrical characteristics of copper indium disulfide thin film

Cited by 10 publications

References 3 publications

Effect of H2S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation

Effect of H2S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation

Effect of deposition temperature on the optical and structural properties of as-deposited CuInS2films

Structural, electrical and optical properties of Bi‐doped CuInS 2 thin films grown by vacuum evaporation method

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Effect of H₂S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation

Effect of H₂S Annealing on Sb-Doped Cu–In–S Thin Films Prepared by Vacuum Evaporation

Effect of deposition temperature on the optical and structural properties of as-deposited CuInS₂films

Structural, electrical and optical properties of Bi‐doped CuInS ₂ thin films grown by vacuum evaporation method