Structural, electrical and optical properties of Bi‐doped CuInS ₂ thin films grown by vacuum evaporation method

Abstract

Structural, electrical and optical properties of Bi-doped CuInS 2 thin films prepared by a single-source thermal evaporation method were investigated. The as-deposited films were annealed in the temperature range between 100 and 500 °C for 10 min in air. The film of chalcopyrite CuInS 2 single phase was obtained by annealing at 200 °C successfully. It was found that Bi atoms enhanced the growth of CuInS 2 single phase at lower temperature. Furthermore, the crystalline quality of doped films was higher compared with the non-doped ones.

Effect of annealing for CuInS2 thin films prepared from Cu‐rich ternary compound

“…The CuS phase is generated also in the films prepared at the Cu/In ratio of 1.0 and post-annealing in H 2 S [6]. On the other hand, the CuS phase is not generated in the films annealed in air [3][4][5]. This implies that Cu atoms which exist on the film surface are reacted with S atoms in H 2 S gas at annealing temperatures lower than 300 °C.…”

Low-temperature synthesis and characterization of the single chalcopyrite phase CuInS2 compound by vacuum sintering method

“…However, the diffractions of CuIn 11 S 17 and Cu x S are not present in the sample C. It can be concluded that the solid reaction between CuIn 11 S 17 and Cu x S leads to formation of the polycrystalline CIS compound. When the samples were sintered under vacuum above 623 K, the single chalcopyrite phase CIS polycrystalline powders were obtained as the only product in the sample C, D, E, at much lower temperatures than the reported sintering conditions [9][10][11][12].…”

“…E-mail addresses: grchen@fudan.edu.cn (X. Mo), grchen@fudan.edu.cn (G. Chen). been successfully synthesized above 623 K, which is much lower than the reported sintering temperature [9][10][11][12]. The properties of the products were characterized by X-ray diffraction, Raman scattering, scanning electron microscope, energy dispersive X-ray spectroscopy and UV-VIS-NIR spectroscopy.…”

“…However, the bulk single phase CIS compounds were difficult to obtain at low temperatures by vacuum sintering method. Up to date, the polycrystalline CIS compounds have been synthesized by both the sintering method above 1273 K [9,10] and the hot-press method under high pressure above 973 K [11,12].…”

Seebeck Coefficient and Optical Studies of Cadmium Doped CuInS2Single Crystal

“…Apart from photovoltaic applications, the compound is also investigated for practical applications in non-linear optical devices [9][10][11]. In order to control a conduction type and obtain a low resistivity, several impurities have been studied [12][13][14][15][16][17]. For any applications the availability of single crystals of the compounds is highly desirable.…”