Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4×6) Reconstruction

Nakano, Yuuta; Negoro, Noboru; Hasegawa, Hideki

doi:10.1143/jjap.41.2542

Cited by 10 publications

(11 citation statements)

References 6 publications

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“…Compared to this, C-V curves of the other reference sample with a SiO 2 / SiN x / GaAs structure are much better behaved. This is related to our previous finding 31 that C-V curves of samples formed on ͑001͒-͑4 ϫ 6͒ surface are usually much better behaved than those formed on the standard As-rich ͑001͒-͑2 ϫ 4͒ surface in agreement with the movement of Fermi level. sions are much reduced, and magnitudes of hysteresis, which are shown for 1 kHz curves for convenience, are also much reduced.…”

Section: Formation Of Mis Interfaces Having Hfo 2 Dielectric and Csupporting

confidence: 87%

“…Furthermore, the results showed strong correlation with macroscopic band bending measurements by XPS. 31 Thus, considering the achievement of a nearly flatband in the ͑111͒B samples, it is highly likely that the Si ICL is an ultrathin pseudomorphic single crystal layer and its ordered structure removes surface states from GaAs surfaces as well as its own surface.…”

Section: A Band Bending Change Caused By Si Icl Growthmentioning

confidence: 99%

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Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

Akazawa

Hasegawa

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In order to realize pinning-free high-k dielectric metal-insulator-semiconductor ͑MIS͒ gate stack on ͑001͒ and ͑111͒B oriented GaAs surfaces using the Si interface control layer ͑Si ICL͒ concept, formation of a SiN x / Si ICL double layer was investigated as a chemically stable structure on ͑001͒ and ͑111͒B surfaces which allows ex situ deposition of HfO 2 high-k dielectric films without losing the benefit of Si ICL. First, Si ICLs grown by molecular beam epitaxy ͑MBE͒ on ͑001͒ and ͑111͒B GaAs surfaces with various initial surface reconstructions were investigated in detail by reflection high energy electron diffraction and x-ray photoelectron spectroscopy ͑XPS͒ investigations at each step of the interface formation. Large shifts of the surface Fermi level position toward unpinning were observed after Si ICL growth on appropriately formed Ga-stabilized surfaces. It was found that Si layers grow epitaxially with Si-Ga bonds at the Si/ GaAs interface and Si-As termination on top, suggesting surfactant roles played by As atoms. Then, an ultrathin SiN x buffer film was formed on the Si ICL by its in situ partial nitridation in the MBE chamber. An XPS analysis of the resultant SiN x / Si ICL double layer formed on ͑001͒ and ͑111͒B surface indicated that the structure is chemically stable against air exposure on both surfaces in the sense that it prevents the host GaAs surface from subcutaneous oxidation, although SiN x film itself partially turns into SiO x N y . Finally, high-k MIS capacitors were formed by ex situ deposition of HfO 2 on the SiN x / Si ICL/GaAs structure after transferring the sample through air. The capacitance-voltage ͑C-V͒ analysis indicated that the MIS interface is completely pinning-free with a minimum interface state density in the range of low 10 11 cm −2 eV −1 .

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Section: Formation Of Mis Interfaces Having Hfo 2 Dielectric and Csupporting

confidence: 87%

Section: A Band Bending Change Caused By Si Icl Growthmentioning

confidence: 99%

Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

Akazawa

Hasegawa

2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Their surfaces showed well-defined Ga-stabilized ( 19 19 × ) RHEED patterns during the growth at 670-700 o C. The patterns changed to (2x2) when the growth temperature was set to be lower than 500 o C. These results are in agreement with the previous works [7,8]. In order to see the effect of surface stoichiometry, which was found crucial in the passivation of the (001) surface [3,4], some of the samples were irradiated with Ga flux for a few seconds at 500 o C to make the surface Ga-rich. Such Ga-irradiated surfaces showed (1x1) pattern.…”

Section: Methodssupporting

confidence: 90%

“…Thus, success of III-V nanotechnology obviously depends on availability of a suitable surface passivation technology. To cope with this difficulty, we proposed a surface passivation scheme using an MBE-grown Si interlayer referred to as the Si interface control layer (Si ICL), and have shown that it was very effective for passivation of (001) surfaces [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces

2006

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Abstract. Applicability of the Si interface control layer (Si ICL)-based surface passivation to GaAs and AlGaAs (111)B surfaces was investigated. An in-situ X-ray photoelectron spectroscopy (XPS) study confirmed formation of the intended passivation structure. MBE grown GaAs and AlGaAs (111)B surfaces showed strong Fermi level pinning. After Si ICL growth, large shifts of the surface Fermi level position were observed. Photoluminescence (PL) measurements were also used to examine the surfaces of AlGaAs/GaAs quantum well and quantum wire structures grown on the GaAs (111)B substrates. PL intensity reduction caused by surface states was recovered remarkably by the Si ICL-based passivation.

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“…However, such a simplistic view does not seem to be valid, firstly because the amount of As atoms incorporated into Si is at most in the range of 10 On the other hand, we have recently directly shown [14] by scanning tunnelling microscopy and spectroscopy study of the Si ICL formed on a Ga-rich (001)- (4x6) surface of GaAs that the Si ICL grows epitaxially, and the surface becomes completely free of surface states and Fermi level pinning. Furthermore, the results showed strong correlation with macroscopic band bending measurements by XPS [15]. Thus, considering the achievement of a nearly flat band in the present study, it is highly likely that the ultrathin epitaxial Si ICL removes surface states from (111)B surfaces.…”

Section: Xps Spectra Analysis and Growth Mechanismsupporting

confidence: 78%

MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices

Akazawa

Hasegawa

2007

Journal of Crystal Growth

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Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4×6) Reconstruction

Cited by 10 publications

References 6 publications

Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

Formation of ultrathin SiNx∕Si interface control double layer on (001) and (111) GaAs surfaces for ex situ deposition of high-k dielectrics

X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces

MBE growth and in situ XPS characterization of silicon interlayers on (111)B surfaces for passivation of GaAs quantum wire devices

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