Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

“…4). A similar morphology was also reported by Bayram Ref [11]). Bayram and Razeghi [7] called these 2D islands as the quantum disks.…”

“…The average layer thickness and the indium incorporation as a function of growth temperatures were investigated by analyzing o/2y X-ray scan from (0002) reflections. Since the position of the InGaN peak relative to GaN peak in X-ray spectra depends on indium content as well as on the strain in InGaN layer, the strain was independently extracted from reciprocal space map (RSM) from an asymmetric reflection (10)(11)(12)(13)(14)(15). It should be noted that diffracted intensity around (10-15) reflection from InGaN layer was very poor, and hence recoding the RSM was not easy for thin InGaN layers.…”

“…(a) XRD reciprocal space map from 5 nm thick In 0.22 Ga 0.78 N on GaN around(10)(11)(12)(13)(14)(15) reflection. This shows that the InGaN layer is fully strained.…”

Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects

“…[12][13][14] The WL states are not considered in the FCI calculation, since they do not significantly influence the lower QD state transitions due to their rather large energy separation. Though it is known that also the shape and the size of the QDs may depend on the growth direction, 15 we assume the same QD geometry for the nonpolar growth direction (with the restriction that the modeling in the different crystal orientations requires a shift of the QD boundaries of about 10%) to focus on the effect of the built-in field orientation on the optical properties.…”

Metal organic chemical vapor deposition of InGaN alloys on nanowire substrates.

“…The formation of indium rich quantum dots 47 and phase segregation is a common feature in InGaN thin film growth 48 ,49. Nanowires have been shown to have efficient strain relaxing properties. It has also been calculated that the critical thickness for phase segregation to occur is much larger in the case of nanowires than thin films 50 which is a testament to the enhanced strain relaxing properties of napowires 51 Towards this objective, the first step is the controlled synthesis of GaN nanowires on various substrates.…”