Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Kadir, Abdul; Meißner, Christian; Schwaner, Tilman; Pristovsek, Markus; Kneissl, Michael

doi:10.1016/j.jcrysgro.2011.08.003

Cited by 14 publications

(7 citation statements)

References 17 publications

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“…Therefore InGaN grown on GaN experiences a strain which depends on the indium content. A detailed investigation on the growth mechanism of InGaN dots has been reported by Kadir et al 4. The strain due to this lattice mismatch has been exploited to grow InGaN QDs on GaN in the Stranski–Krastanov growth mode.…”

Section: Resultsmentioning

confidence: 99%

“…The typical ω /2 θ X‐ray rocking curve from (0002) reflection together with simulation is shown in Fig. 1 (please see the reference 4 for further details about the X‐ray analysis). Hence the nominal growth rate was determined and the growth time was extrapolated according to the group III partial pressure.…”

Section: Resultsmentioning

confidence: 99%

“…Indium composition and layer thickness were obtained by simulating the ω /2 θ X‐ray rocking curve assuming the InGaN layer to be fully strained. Please see the reference Kadir et al 4 for further details about the X‐ray analysis.…”

Section: Resultsmentioning

confidence: 99%

“…The piezoelectric polarization effect and recombination process of carriers are significantly affected by the shape and size of the QDs. In a previous work, we have reported a detailed investigation of the growth mechanism of self‐assembled InGaN QDs in SK growth mode via metalorganic vapor phase epitaxy (MOVPE) 4. Since these QDs are formed due to the strain arising from highly lattice mismatched systems, control of the shape and size are determined by the total strain energy of the epilayer.…”

Section: Introductionmentioning

confidence: 99%

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Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE

Kadir

Bellmann

Simoneit

et al. 2012

Physica Status Solidi (a)

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InGaN quantum dots (QDs) were grown on GaN templates in the Stranski–Krastanov growth mode at 675 °C via metalorganic vapor phase epitaxy (MOVPE). Typically, QDs with overall density of 109 cm−2, an average diameter 50 nm and average height of 7 nm were obtained. A systemic investigation on the influence of group III and group V partial pressure on the size and distribution of the InGaN QDs is reported. A higher growth rate and/or higher V/III ratio increases the mean height and the density of QDs. The distribution of the dots is found to scale with growth rate and the V/III ratio. This is attributed to a reduction in the surface diffusion of adatoms as the results of increase in partial pressure of the precursor in the reactor.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE

Kadir

Bellmann

Simoneit

et al. 2012

Physica Status Solidi (a)

Self Cite

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“…QDs formed in this method have resulted in extremely low threshold currents in InAs QD LDs. 16 SK growth can also be used to synthesize InGaN QDs, but there is a lack of dimensional control, and also low dot densities (<100/lm 2 ), [17][18][19][20][21][22] that limits their efficiency performance below that of QWs. An alternative approach is to use diblock copolymer lithography and selective-area epitaxy to form InGaN QDs at achieve higher dimensional control, 23 but this approach is still limited to larger size dots.…”

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confidence: 99%

Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching

Wei

Muyeed

Peart

et al. 2018

Applied Physics Letters

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Room temperature luminescence of epitaxial InGaN quantum dots (QDs) formed by quantum sizedcontrolled photoelectrochemical (QSC-PEC) etching and passivation layer regrowth is demonstrated. QSC-PEC etching is performed on a 7.5 nm thick In 0.20 Ga 0.80 N layer emitting at $514-521 nm and with a laser diode emitting at 445 nm. Parameters such as etch bias (0.9 V and 1.5 V), laser average power (20 mW/cm 2 and 100 mW/cm 2 ), and laser operating conditions (pulsed and continuous wave) are explored. QSC-PEC etching of In 0.20 Ga 0.80 N requires a minimum bias (>0.9 V) and pulsed laser conditions in order to form QDs. After etching, the QDs do not exhibit photoluminescence due to defect recombination. Regrowth of passivation layers consisting of a 2 nm thick Al 0.45 Ga 0.55 N layer and a 11 nm thick GaN layer reduce the defect recombination, and room temperature photoluminescence is observed at room temperature at $435-445 nm with narrow full-width at half-maximum of $35 nm. Published by AIP Publishing. https://doi.

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Design and growth of GaN-based blue and green laser diodes

Tian

Zhang

et al. 2020

Sci. China Mater.

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Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Cited by 14 publications

References 17 publications

Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE

Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE

Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching

Design and growth of GaN-based blue and green laser diodes

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