Strong Orientation-Dependent Spin-Orbit Torque in Thin Films of the Antiferromagnet 
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Zhou, Xiaoling; Zhang, J.; Li, F.; Chen, X. Z.; Shi, Guangyuan; Tan, Yiwei; Gu, Youdi; Saleem, Muhammad Shahrukh; Wu, Huaqiang; Pan, Feng

doi:10.1103/physrevapplied.9.054028

Cited by 88 publications

(50 citation statements)

References 36 publications

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“…The AF Néel order n in metallic AFs (CuMnAs or Mn2Au) can be switched electrically by field-like SOT due to the broken inversion symmetry in AFs. [1][2][3] For AFIs, the switching of Néel order can be achieved in HM/AFI bilayers by damping-like SOT generated by SHE in the HM without the need of external field. 6,8 We report the first observation of tri-state, step-like switching of Néel order in Pt(2 nm)/α-Fe2O3(30nm) bilayers grown on Al2O3(001) substrates, which is read out by Hall resistance (ΔRxy) detection.…”

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confidence: 99%

Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

et al. 2020

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These two authors contributed equally to this work. The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn 2 Au. 1-5 Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, 6-9 while its mechanism is under debate. Here, we report the first demonstration of convincing, non-decaying, steplike electrical switching of tri-state Néel order in Pt/-Fe 2 O 3 bilayers. Our experimental data, together with Monte-Carlo simulations, reveal the clear mechanism of the switching behavior of -Fe 2 O 3 Néel order among three stable states. We also show that the observed "saw-tooth" Hall resistance is due to an artifact of Pt, not AF switching, while the signature of AF switching is step-like Hall signals. This demonstration of electrical control of magnetic moments in AF insulator (AFI) films will greatly expand the scope of AF spintronics by leveraging the large family of AFIs.Spin-orbit torque (SOT) induced switching of ferromagnets (FM) by an adjacent heavy metal (HM) has raised wide interests in recently years, 10-12 where a charge current in the HM generates spins at the HM/FM interface via the spin Hall effect (SHE). AFs offer the advantage of no stray field, robustness against external field, THz response, and abundance of material

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confidence: 99%

Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

et al. 2020

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“…Current induced magnetic switching has been recently reported in both metallic [1][2][3][4][5][6][7] and insulating [8][9][10][11] antiferromagnetic systems. Anisotropic magnetoresistance (AMR), spin Hall magnetoresistance (SMR) or related planar Hall resistance (PHR) has been generally employed to characterize the electrically induced 90° Né el vector switching.…”

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confidence: 99%

Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film

Zhang¹,

Finley²,

Safi³

et al. 2019

Phys. Rev. Lett.

105

102

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Electrical control and detection of magnetic ordering inside antiferromagnets has attracted considerable interests, for the potential advantages in operating speed and device densities.In contrast to ferromagnets, where the current-induced torque on magnetic moments can be analyzed via comparison with magnetic field's influence, the quantitative investigation on the spin torque mechanism in antiferromagnets represents a greater challenge, due to the lack of a convenient, independent method for controlling Né el vectors. Here by utilizing an antiferromagnetic insulator with Dzyaloshinskii-Moriya interaction, α-Fe2O3, we show that the Né el vector can be easily controlled with the application of a moderate external magnetic field, which can be further used to examine the current-induced magnetic dynamics. We find that in this antiferromagnetic insulator, current-induced magnetoresistance change can be complicated by resistive switching that does not have a magnetic origin. By excluding nonmagnetic switching and comparing the current-induced and field-induced Né el vector tilting, we reveal the important role of magnetoelastic effect in current-induced dynamics of this antiferromagnet. The nature and magnitude of magnetoelastic effect is further determined and compared with possible spin orbit torque influences.

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“…While τ 1,2 are independent on j and ∆t, they decrease with increasing T s and tend towards zero for T s > 280 K. We can calculate the energy barriers of the switchable grains using Eq. (7). The resulting E 1,2 B (T s ) curves are shown in Fig.…”

Section: Discussionmentioning

confidence: 98%

“…the material exhibits combined PT (parity and time) symmetry. An electrical current-density j flowing through an antiferromagnet with this symmetry gives rise to the inverse spingalvanic effect, which generates local spin accumulations and eventually results in a torque acting on the Néelvector L = m A − m B favoring an orientation L ⊥ j. Current-induced Néel-order switching has been observed by measuring the planar Hall resistance R PHE in tetragonal CuMnAs [3,4] fabricated by molecular beam epitaxy (MBE) and in tetragonal Mn 2 Au [5][6][7] fabricated by sputtering. However, the proposed NSOT mechanism alone does not explain the strong dependencies of the * tristan@physik.uni-bielefeld.de † meinert@physik.uni-bielefeld.de switching efficiency on sample temperature and current density.…”

Section: Introductionmentioning

confidence: 99%

Electrical Néel-Order Switching in Magnetron-Sputtered CuMnAs Thin Films

et al. 2019

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Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with certain crystal-symmetry show an intrinsic Néel-order spin-orbit torque that can efficiently switch the magnetic order of an antiferromagnet. The tetragonal variant of CuMnAs was shown to be electrically switchable by this intrinsic spin-orbit effect and its use in memory cells with memristive properties has been recently demonstrated for highquality films grown with molecular beam epitaxy. Here, we demonstrate that the magnetic order of magnetron-sputtered CuMnAs films can also be manipulated by electrical current pulses. The switching efficiency and relaxation as a function of temperature, current density, and pulse width can be described by a thermal-activation model. Our findings demonstrate that CuMnAs can be fabricated with an industry-compatible deposition technique, which will accelerate the development cycle of devices based on this remarkable material. arXiv:1903.12387v2 [cond-mat.mtrl-sci]

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Strong Orientation-Dependent Spin-Orbit Torque in Thin Films of the Antiferromagnet Mn2Au

Cited by 88 publications

References 36 publications

Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

Electrical Switching of Tristate Antiferromagnetic Néel Order in α−Fe2O3 Epitaxial Films

Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film

Electrical Néel-Order Switching in Magnetron-Sputtered CuMnAs Thin Films

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