Strong optical injection and the differential gain in a quantum dash laser

Lester, L. F.; Naderi, Nader; Grillot, Frédéric; Raghunathan, Ravi; Kovanis, Vassilios

doi:10.1364/oe.22.007222

Cited by 18 publications

(10 citation statements)

References 26 publications

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“…The LEF was also measured above threshold and varied from 1 at threshold to 11 at 90 mA, attributed to the carrier density being unclamped at threshold which is due to the inhomogeneous gain broadening in Qdashes. Recently, an impressive 16.5 GHz -3dB small signal modulation bandwidth was reported by Lester et al [278] by slightly blue shifted (1.535 µm) injection locked Qdash laser under strong optical injection of 9.3 dB. This was approximately four times bandwidth enhancement compared to the free-running 4.5 GHz at 1.565 µm.…”

Section: Injection Locking/critical Feedback Of Qdash Lasersmentioning

confidence: 86%

“…In addition, remarkable values of near zero above-threshold LEF and 5.9×10 -14 cm -2 differential gain were obtained under these conditions. This is highly attractive as packaged RF photonic transmitter in high-frequency optical fiber links [278,279]. A detailed dynamic study of an injection locked Qdash laser was carried out by Pochet et al [280,281] at zero detuning, and it was found that Qdash laser's large damping rate, gain compression coefficient, and sufficiently small LEF yielded period-one and stable locking operating conditions at bias currents close to threshold.…”

Section: Injection Locking/critical Feedback Of Qdash Lasersmentioning

confidence: 99%

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Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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Section: Injection Locking/critical Feedback Of Qdash Lasersmentioning

confidence: 86%

Section: Injection Locking/critical Feedback Of Qdash Lasersmentioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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“…In the small-signal analysis, a current modulation I δ with frequency ω leads to the modulations of the carrier densities Based on the differential rate equation of the model [22], the H -factor of the nanostructured laser is given by The semiconductor laser under study is based on an InAs/InP Qdot structure, for which all the numerical parameters used in the simulation are described in [21]. As expected, Fig.…”

Section: Gs Esmentioning

confidence: 94%

“…(1) [19,20]. Reduction of the Hfactor was indeed pointed out owing to the decrease of the carrier density and thereby the refractive index variation, or directly to the relatively large exaltation of the differential gain [21]. Our recent work has demonstrated that the H -factor of solitary Qdot lasers is strongly dependent on the modulation frequency-larger at low-frequency regime and smaller at highfrequency one, which is different to bulk or quantum well lasers [22].…”

Section: Vg S Smentioning

confidence: 96%

Frequency-dependent linewidth enhancement factor of optical injection-locked quantum dot/dash lasers

Wang¹,

Chaibi²,

Huang³

et al. 2015

Opt. Express

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Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1364/OE.23.021761Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Frequency-dependent linewidth enhancement factor of optical injection-locked quantum dot/dash lasers Wang, Cheng; Chaibi, Mohamed E.; Huang, Heming; Erasme, Didier; Poole, Philip; Even, Jacky; Grillot, Frédéric http://nparc.cisti-icist.nrc-cnrc.gc.ca/fra/droits L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/eng/view/object/?id=970a2249-b10c-465c-8450-b8f93e3e9fa8 http://nparc.cisti-icist.nrc-cnrc.gc.ca/fra/voir/objet/?id=970a2249-b10c-465c-8450-b8f93e3e9fa8 Abstract: Combining theoretical and experimental studies show that optical injection strongly changes the behavior of the linewidth enhancement factor ( H -factor) and the FM-to-AM indices ratio (FAIR) in quantum dash/dot semiconductor lasers. In contrast to solitary lasers, both the H -factor and the FAIR at low-frequency modulation are reduced by optical injection. At high modulation frequency, however, the phaseamplitude coupling characteristics are little influenced by optical injection.

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“…Nevertheless, it is important to note that while the relaxation oscillation frequency increases with the injected power, the modulation bandwidth can in fact be lower than in the free-running case due to a frequency dip arising in the modulation response of the SL [23]. To this end, recent results have shown the possibility to maintain a relative broadband and flat modulation response by controlling both the differential gain and the linewidth enhancement factor of a quantum dash Fabry-Perot laser, operating under strong optical injection [24]. However, further enhancements of injection efficiency remain difficult to reach as both a low mirror reflectivity and a short cavity roundtrip times are required in order to maximize the coupling of the injected light into the slave laser cavity.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

Sarraute

Schires

LaRochelle

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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The modulation response of an optically-injected gain lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly-modulated broadband optical sources for high-speed operation at 40 Gbps and beyond.

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Strong optical injection and the differential gain in a quantum dash laser

Cited by 18 publications

References 26 publications

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Frequency-dependent linewidth enhancement factor of optical injection-locked quantum dot/dash lasers

Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

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