The onset of nonlinear dynamics and chaos is evidenced in a mid-infrared distributed feedback quantum cascade laser both in the temporal and frequency domains. As opposed to the commonly observed route to chaos in semiconductor lasers, which involves undamping of the laser relaxation oscillations, quantum cascade lasers first exhibit regular self-pulsation at the external cavity frequency before entering into a chaotic low-frequency fluctuation regime. The bifurcation sequence, similar to that already observed in class A gas lasers under optical feedback, results from the fast carrier relaxation dynamics occurring in quantum cascade lasers, as confirmed by numerical simulations. Such chaotic behavior can impact various practical applications including spectroscopy, which requires stable single-mode operation. It also allows the development of novel mid-infrared high-power chaotic light sources, thus enabling secure free-space high bit-rate optical communications based on chaos synchronization.
We report an approach based upon vertical cavity surface emitting lasers (VCSELs) to reproduce optically different behaviors exhibited by biological neurons but on a much faster timescale. The technique proposed is based on the polarization switching and nonlinear dynamics induced in a single VCSEL under polarized optical injection. The particular attributes of VCSELs and the simple experimental configuration used in this work offer prospects of fast, reconfigurable processing elements with excellent fan-out and scaling potentials for use in future computational paradigms and artificial neural networks
In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%.
The spin-flip model describing optically pumped spin-polarized vertical-cavity surface-emitting lasers is considered. The steady-state solutions of the model for elliptically-polarised fields are studied. Asymptotic analysis for the existence and stability of the steady-state solutions is developed, particularly in the presence of pump polarisation ellipticity. The expansion is with respect to small parameters representing the ellipticity and the difference between the total pump power and the lasing threshold. The analytical results are then confirmed numerically, where it is obtained that generally one of the steady-state solutions is stable while the other is not. The theoretical results are shown to be in qualitative agreement with the experiments.
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