“…10,11 Rather, the dielectric response is due to barrier-layer capacitances associated with one or more of the following: grain boundaries, twin boundaries ͑or domain boundaries͒, dislocation networks, etc. [10][11][12] Specifically, the grain boundary barrierlayer capacitances are generally associated with non-Ohmic properties in metal oxide polycrystalline semiconductors. [13][14][15][16] Indeed, in addition to the remarkable and intriguing dielectric property, Chung et al 12 observed that potential barrier exists intrinsically in the grain boundary region, likely possessing a Schottky-type nature, according to Refs.…”