Multi-functional properties of CaCu3Ti4O12 thin films

Abstract

In this work, electric transport properties of CaCu 3 Ti 4 O 12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications. V C 2012 American Institute of Physics. [http://dx

Na+ doping induced changes in the reduction and charge transport characteristics of Al2O3-stabilized, CuO-based materials for CO2 capture

“…19,20 The materials were first crushed and then pelletized via uniaxial (40 kN for 2 min) and isostatic (1000 kN for 2 min) pressing. The pellets were sintered in air (P O 2 = 0.21 bar) for 24 h at 1000 1C (the heating and cooling rate was 3 1C min À1 ).…”

Role of oxygen on the phase stability and microstructure evolution of CaCu3Ti4O12 ceramics

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Memristor Kinetics and Diffusion Characteristics for Mixed Anionic‐Electronic SrTiO3‐δ Bits: The Memristor‐Based Cottrell Analysis Connecting Material to Device Performance

“…In general, a resistive switch can attain different resistance states which are controlled by the polarity or magnitude of an applied bias resulting in pinched hysteretic I–V profiles . In recent years, resistive switching has been reported for various classes of materials ranging from sulfides (e.g., Cu 2 S, Ag 2 S) to binary oxides (e.g., TiO 2 , SiO 2 , CuO, NiO, CoO, Fe 2 O 3 , MoO, VO 2 ) over to complex oxides (e.g., SrTiO 3‐δ , (La , Sr)MnO 3 , (Pr,Ca)MnO 3 , BaTiO 3 , (La,Sr)(Co,Fe)O 3 , CeCu 3 Ti 4 O 12 ) . Among those the most extensively studied switching oxides are already processed in today's semiconductor industry as gate oxides like SrTiO 3‐δ , SiO 2 , TiO 2‐δ , Ta 2 O 5‐δ or HfO 2‐δ.…”