1996
DOI: 10.1016/0040-6090(95)08082-1
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Strong 1.54 μm luminescence from erbium-doped porous silicon

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Cited by 25 publications
(11 citation statements)
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“…5 Nanostructuring has been investigated for the prevention of this thermal quenching. [6][7][8][9][10][11][12] In addition, Si nanocrystallites have advantages of ͑a͒ large absorption cross sections (10 Ϫ16 -10 Ϫ14 cm 2 , depending on excitation energy͒ 13 compared to Er ions (10 Ϫ21 cm 2 ); 14 ͑b͒ continuous absorption bands; 15 ͑c͒ a high concentration of active Er ions (2 ϫ10 20 cm Ϫ3 ) 16 compared to those in Si crystals (1.3 ϫ10 18 cm Ϫ3 ); 4 and ͑d͒ long-lived excitation source 17,18 compared to Er decay time. 19 Therefore, Er-doped SiO 2 films, including Si nanocrystallites (nc-Si/SiO 2 ) as sensitizers, can be also applied to compact optical amplifiers at 1.5 m, pumped by laser diodes or flash lamps.…”
mentioning
confidence: 99%
“…5 Nanostructuring has been investigated for the prevention of this thermal quenching. [6][7][8][9][10][11][12] In addition, Si nanocrystallites have advantages of ͑a͒ large absorption cross sections (10 Ϫ16 -10 Ϫ14 cm 2 , depending on excitation energy͒ 13 compared to Er ions (10 Ϫ21 cm 2 ); 14 ͑b͒ continuous absorption bands; 15 ͑c͒ a high concentration of active Er ions (2 ϫ10 20 cm Ϫ3 ) 16 compared to those in Si crystals (1.3 ϫ10 18 cm Ϫ3 ); 4 and ͑d͒ long-lived excitation source 17,18 compared to Er decay time. 19 Therefore, Er-doped SiO 2 films, including Si nanocrystallites (nc-Si/SiO 2 ) as sensitizers, can be also applied to compact optical amplifiers at 1.5 m, pumped by laser diodes or flash lamps.…”
mentioning
confidence: 99%
“…Er luminescence efficiency at room temperature for a given host depends on both the temperature and the time of annealing treatments. Moreover, the presence of oxygen in the matrix is known to improve Er luminescence intensity [3,4,6,18]. Some authors [4,26,27] have reported that Er is optically active when Er-O, Si-Er-O complexes are formed whereas Si-Er complexes would not be.…”
Section: Study Of the Effect Of Thermal Treatments On Photoluminescenmentioning
confidence: 97%
“…The first-step is usually performed in an oxygen environment with temperatures up to 800 8C [18,19] to oxidize the porous silicon matrix. The second-step for Er activation and diffusion in the matrix is performed at higher temperatures because of the low diffusion coefficient of Er in Si (10 À14 cm 2 /s at 1000 8C) [20].…”
Section: Introductionmentioning
confidence: 99%
“…Si(OC 2 H 5 ) 4 and Fe(OH) 3 were used as the precursors. Penetration of the sols through the channel of the pores was concluded from observation the components of xerogels with secondary-ion mass spectroscopy (SIMS) and secondary-neutral mass spectroscopy (SNMS) [8,9], cross-section TEM-images [13], and Rutherford backscattering (RBS) [12] in porous silicon 0.3 [13], 1.5 [12], and 5 [8] µm thick.…”
Section: Porous Siliconmentioning
confidence: 99%
“…Interest in fabrication of the structure xerogel/porous silicon was initiated in 1990s by a challenging problem of development light-emitting devices for visible and infrared emission on silicon basis. In the experiments micro- [7], meso- [8][9][10][11][12][13][14], and macroporous [15] silicon was used for spin-on deposition of coatable sols containing erbium nitride dissolved in water and ethanol. Si(OC 2 H 5 ) 4 and Fe(OH) 3 were used as the precursors.…”
Section: Porous Siliconmentioning
confidence: 99%