Stress measurement in MEMS using Raman spectroscopy

Animoto, Sherwin T.; Chang, D. J.; Birkitt, Andra D.

doi:10.1117/12.324091

Cited by 10 publications

(8 citation statements)

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“…As mentioned before, the Raman effect is produced when photon energy is increased or decreased owing to photons scattering from molecules or crystal lattices and it reflects the lattice vibration energy of the material in terms of Raman shift. When the material is strained, the crystal structure (or energy level) of the material is altered, thus the Raman shift will be changed [ 50 ].…”

Section: Raman Spectroscopy Characterization In Micro/nano-machinimentioning

confidence: 99%

“…Determination of the residual stress can provide very important information to improve the mechanical properties of the workpiece. Fortunately, Raman spectroscopy is very useful for detecting residual stress in single crystal and polycrystalline materials [ 50 ].…”

Section: Raman Spectroscopy Characterization In Micro/nano-machinimentioning

confidence: 99%

“…Further development regarding the quantitative calculation of Si Raman peaks with equal biaxial stress revealed that the band position shift with respect to the Si crystalline band follows [ 50 ]:

where σ was in dyne/cm 2 (1 dyne/cm 2 = 0.1 Pa) and the Raman shift for unstressed single crystal Si was 520.28 cm −1 with an uncertainty of 0.06 cm −1 .…”

Section: Raman Spectroscopy Characterization In Micro/nano-machinimentioning

confidence: 99%

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Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining

Song

et al. 2018

Micromachines

127

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The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials’ stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.

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Section: Raman Spectroscopy Characterization In Micro/nano-machinimentioning

confidence: 99%

Section: Raman Spectroscopy Characterization In Micro/nano-machinimentioning

confidence: 99%

where σ was in dyne/cm 2 (1 dyne/cm 2 = 0.1 Pa) and the Raman shift for unstressed single crystal Si was 520.28 cm −1 with an uncertainty of 0.06 cm −1 .…”

Section: Raman Spectroscopy Characterization In Micro/nano-machinimentioning

confidence: 99%

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Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining

Song

et al. 2018

Micromachines

127

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“…The Raman shift change Acom(m = 1,2,3) is given as below [27,30] The Raman shift change Acom(m = 1,2,3) is given as below [27,30] …”

Section: Stress Measurement By Raman Spectroscopymentioning

confidence: 99%

“…Raman spectroscopy has been an effective tool to investigate the mechanical stress and strain of silicon at micro scale [27,28,30]. Raman spectroscopy has been an effective tool to investigate the mechanical stress and strain of silicon at micro scale [27,28,30].…”

Section: Effect Of Creep Deformation On Raman Spectroscopymentioning

confidence: 99%

In Situ Deformation of Silicon Cantilever Under Constant Stress as a Function of Temperature

Gan

Zhang

Tomar

2014

Journal of Nanotechnology in Engineering and Medicine

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In Situ D efo rm atio n of S ilicon C an tilever U nder Constant Stress as a Function of T e m p eratu reThis research reports in situ creep properties of silicon microcantilevers at temperatures ranging from 25 °C to 100°C under uniaxial compressive stress. Results reveal that in the stress range o f50-150MPa, the strain rate of the silicon cantilever increases linearly as a function of applied stress. The strain rate (0.2-2.5 xlO~6s~I) was comparable to lit erature values for bulk silicon reported in the temperature range of 1100-1300°C at one tenth o f the reported stress level. The experiments quantify the extent of the effect of sur face stress on uniaxial creep strain rate by measuring surface stress values during uniax ial temperature dependent creep.

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Experimentation at the Micron and Submicron Scale

Chasiotis

Knauss

2003

Comprehensive Structural Integrity

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Stress measurement in MEMS using Raman spectroscopy

Cited by 10 publications

References 0 publications

Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining

Topic Review: Application of Raman Spectroscopy Characterization in Micro/Nano-Machining

In Situ Deformation of Silicon Cantilever Under Constant Stress as a Function of Temperature

Experimentation at the Micron and Submicron Scale

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