Stress-inducedE0 photoreflectance spectra on GaAs/Si and InP/Si heterostructures

Abstract

The stress‐induced behavior of E0 photoreflectance (PR) spectra of strained III–V epilayers in n‐GaAs/Si and n‐InP/Si heterostructures is studied. Expected effects of residual biaxial layer stresses σ∥ on spectral shape and energetic position of the E0 PR features are simulated by model calculations for medium‐field as well as low‐field PR spectra. Experimental PR spectra are analyzed with the aid of quantitative lineshape fitting. The full fitting analysis reveals energetically shifted heavy hole (hh) transitions as dominant spectral constituent in the stress‐induced PR spectra and provides reliable values E0hh of hh transition energies under strain. The shift of E 0hh is used to evaluate the value of the layer stress σ∥.

Quantitative Photoreflectance Experiments on Indium Phosphide Surfaces and Structures

“…The high spectral resolution even under room temperature conditions favors the use of this technique for the identification of deformation-induced spectral structures [6]. From a comparison of InP/InP PR spectra with (001) n-InP/Si samples (Fig.…”

“…However, in the past it has been used much less for indium phosphide [2,3,4,5,6] being an equally important compound semiconductor for a variety of promising micro-and optoelectronic applications such as laser diodes, high-speed transistors, integrated devices, quantum wells, and solar cells based on the InP, InGaAsP, and InAlAs material systems [7].…”