Quantitative Photoreflectance Experiments on Indium Phosphide Surfaces and Structures

Hildebrandt, Stefan; Schreiber, J.; Kuz’menko, R. V.; Gansha, A.; Kircher, W.; Höring, L.

doi:10.1557/proc-406-259

Cited by 1 publication

(1 citation statement)

References 18 publications

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“…Using PR, a number of studies of the Fermi level on the surface of bulk/thin film material have been reported on Si, 68,69 GaAs(001), 70 -79 InP(001), 29,80,81 InAlAs(001), 82 GaAs 1 x N x (0 Ä x Ä 0.0232) 83 and wurzite GaN(0001). 84,85 From the phase of the CER signal Krystek et al have determined the carrier type at n-and p-type GaN(0001) surfaces as well as at the InGaN(0001) surface and the InGaN/GaN interface.…”

Section: Bulk Materialsmentioning

confidence: 99%

Study of semiconductor surfaces and interfaces using electromodulation

Pollak

2001

Surface & Interface Analysis

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The modulation spectroscopy technique of electromodulation (EM) is a major tool for the study and characterization of a number of semiconductor surfaces/interfaces and also for the evaluation of processinduced damage at surfaces. The most useful forms of EM are photoreflectance (PR) and contactless electroreflectance (CER) because they are sensitive to surface/interface electric fields and often yield the sharpest structure (third-derivative lineshape of the unmodulated spectrum in the case of bulk/thin-film material). For sufficiently high electric fields the PR/CER spectra may exhibit Franz-Keldysh oscillations, which are a direct measure of the relevant electric field. Furthermore, PR and CER require no special mounting of the sample and hence can be employed in situ (PR) or non-destructively on wafer-sized material. This article will discuss some recent applications of PR/CER for the investigation of a number of surfaces/interfaces, such as: process-induced effects on the surface of Si; Fermi-level pinning on a number of III-V materials, including low-temperature-grown GaAs (with excess As) and wurtzite GaN; Schottky barrier formation; process-induced damage (sputtering, reactive ion etching, chemically assisted ion beam etching) on III-V materials; homojunctions (GaAs/GaAs); heterojunctions (GaAlAs/GaAs, ZnSe/GaAs, CdTe/GaAs, AlInAs/InP, InGaAs/InP, InGaAs/InAlAs and wurtzite InGaN/GaN); and device structures such as heterojunction bipolar transistors and pseudomorphic high-electron-mobility transistors. A number of these studies have been performed in situ with an ultrahigh vacuum environment.

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Section: Bulk Materialsmentioning

confidence: 99%

Study of semiconductor surfaces and interfaces using electromodulation

Pollak

2001

Surface & Interface Analysis

View full text Add to dashboard Cite

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Quantitative Photoreflectance Experiments on Indium Phosphide Surfaces and Structures

Cited by 1 publication

References 18 publications

Study of semiconductor surfaces and interfaces using electromodulation

Study of semiconductor surfaces and interfaces using electromodulation

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