Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm

Amat, E.; Almudéver, Carmen G.; Aymerich, Nivard; Canal, Ramón; Rubio, Antonio

doi:10.1016/j.mejo.2013.12.001

Cited by 5 publications

(4 citation statements)

References 16 publications

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“…The 3T1C cell structure has an interesting characteristic in that reading data from the storage cell does not require the content of the cell to be discharged onto a shared bit line. That is data reads to DRAM cells are not destructive in 3T1C cells [12].…”

Section: B Three-transistor Dram Cellmentioning

confidence: 99%

Design and Comparative Analysis of Low Power Dynamic Random Access Memory Array Strucyure

Gavaskar¹,

Karthikeyan²,

Rohini³

et al. 2015

IJERT

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Memory plays an essential role in the design of electronic systems where storage of data is required. In this paper comparative analysis of different DRAM (Dynamic Random Access Memory) cell based memory array structure has been carried out in nanometer scale memories. Modern advanced processor use DRAM cells for chip and program memory. But the major drawback of DRAM is the power dissipation. The major contribution of power dissipation in DRAM is off-state leakage current. Also the improvement of power efficiency is difficult in DRAM cells. This paper investigates the power dissipation analysis in DRAM cells. Here 1T1C dram cell, 3T dram cell, 4T dram cell has been designed using TANNER EDA Tool.

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Section: B Three-transistor Dram Cellmentioning

confidence: 99%

Design and Comparative Analysis of Low Power Dynamic Random Access Memory Array Strucyure

Gavaskar¹,

Karthikeyan²,

Rohini³

et al. 2015

IJERT

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“…The circuit enumerates a circuit which exists as two cross-coupled inverters along with an access transistor which is controlled by the read word line (RWL) for read operation and two more access transistors which are controlled by the write word line (WWL) for write operation [3]. Figure 2 depicts the circuit diagram of an SRAM 11T cell.…”

Section: Sram 11t Cellmentioning

confidence: 99%

“…ROM, RAM, EPROM, EEPROM, Flash memory, static random access memory (SRAM) [1,2], dynamic random access memory (DRAM) [3,4], synchronous dynamic random access memory (SDRAM), and the very new magnetoresistive random access memory (MRAM) that could now be seen in the electronics literature. Each one has its own merits and areas in which it may be used.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Electronic Memories and Memory Subsystems

Asthana¹,

Mishra²

2018

Advanced Electronic Circuits - Principles, Architectures and Applications on Emerging Technologies

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Memories have played a vital role in embedded system architectures over the years. A need for high-speed memory to be embedded with state-of-the-art embedded system to improve its performance is essential. This chapter focuses on the development of highspeed memories. The traditional static random access memory (SRAM) is first analyzed with its different variant in terms of static noise margin (SNM); these cells occupy a larger area as compared to dynamic random access memory (DRAM) cell, and hence, a comprehensive analysis of DRAM cell is then carried out in terms of power consumption, read and write access time, and retention time. A faster new design of P-3T1D DRAM cell is proposed which has about 50% faster reading time as compared to the traditional three-transistor DRAM cell. A complete layout of the structure is drawn along with its implementation in a practical 16-bit memory subsystem.

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“…If allow (0) level is stored, transistor T2 keeps turned off. [9] Variability introduces a wide range of effects, especially on the performance of integrated circuits. Some of them appear during the manufacturing process, others during the working life, and all of them have as a consequence a decrease in the circuit reliability.…”

Section: T1d Dram Cellmentioning

confidence: 99%