Strained-silicon MOSFETs of low leakage current and high breakdown voltage for analog applications

Sugii, Nobuyuki; Kondô, Masao; Miyamoto, Masahiko; Hoshino, Yo; Hatori, M.; Hirasawa, W.; Kimura, Y.; Kimura, S.; Kondo, Y.; Yoshida, Isao

doi:10.1109/.2005.1469209

Cited by 9 publications

(4 citation statements)

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“…Engineering of strain is of great importance for further improvement of the carrier mobility. On the other hand, it has been clarified that the thickness of the strained layer has an effect on performances of strained Si metal-oxide-semiconductor field-effect transistors (MOSFETs) because the interface between the strained Si layer and the underlying SiGe buffer layer acts as an undesirable current path [17]. To avoid this problem, separation of the source/drain regions from the Si/ SiGe interface should be increased, which means a larger thickness of the strained Si is desirable.…”

Section: Introductionmentioning

confidence: 99%

Stability of strain in Si layers formed on SiGe/Si(110) heterostructures

Arimoto

Onogawa

Saito

et al. 2018

Semicond. Sci. Technol.

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Strained Si/relaxed SiGe heterostructures grown on Si(110) substrates are attractive as a platform for high-hole-mobility Si-wafer-based electronic devices. The thickness of the strained Si has an impact on the performances of devices since the influence of the states at the Si/SiGe interface and the density of the diffused Ge atoms in the channel region can be suppressed by increasing the strained Si thickness. In this study, the critical layer thickness of a solid-source molecular beam epitaxy (MBE) grown strained Si film on a SiGe/Si(110) heterostructure with a Ge composition of about 30% was investigated by using polarized micro-Raman spectroscopy. Evolution of the surface morphology with the growth of the strained Si layer was also studied using atomic force microscopy. As a result, it is concluded that a nearly 70 nm thick smooth and anisotropically strained Si film can be formed on a Si 0.7 Ge 0.3 /Si(110) heterostructure by using the solid-source MBE method.

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Section: Introductionmentioning

confidence: 99%

Stability of strain in Si layers formed on SiGe/Si(110) heterostructures

Arimoto

Onogawa

Saito

et al. 2018

Semicond. Sci. Technol.

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“…In addition to the reliability issue, the II phenomenon is a key factor for the device design, such as the application of the high-frequency power amplifier function 10) or a lower subthreshold slope characteristic. 11) On the other hand, II measurements also have potential applications in identifying electron tunneling components. 12) The aim of this study is to explore the II characteristics of strained-Si nMOSFETs with different strained-Si cap layers at two Ge contents.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Kang

Huang

Huan

et al. 2008

jjap

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We study three-dimensional massive gravity formulated as a theory with two dynamical metrics, like the f -g theories of Isham-Salam and Strathdee. The action is parity preserving and has no higher derivative terms. The spectrum contains a single massive graviton. This theory has several features discussed recently in TMG and NMG. We find warped black holes, a critical point, and generalized Brown-Henneaux boundary conditions.

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“…It is generally believed that misfit dislocations need to be kept well outside the transistor's space charge regions, although recent experiments suggest that misfits are electrically active only in combination with high doping levels. 3 Apart from misfit dislocations, a SiGe virtual substrate also contains threading dislocations that run up from the SiGe/bulk Si interface toward the strained silicon ͑Fig. 1͒.…”

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confidence: 99%

Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer Substrates

Eneman

Simoen

Delhougne

et al. 2006

J. Electrochem. Soc.

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This paper describes the impact of various defect types on the junction leakage in highly doped drain p+∕n junctions, fabricated on strained silicon/relaxed silicon–germanium (SiGe) virtual substrates. The SiGe substrates were fabricated with a thin buffer-layer scheme, using a carbon-doped layer to induce a high relaxation degree of the virtual substrate. Threading dislocations, carbon-induced defects, and residual implantation damage each have a distinct effect on the junction leakage, generation lifetime, and high-temperature behavior of the diodes. It is shown that threading dislocations degrade the junction quality at room temperature. However, the high-temperature behavior of these junctions is diffusion-dominated. When present in the depletion region, carbon-induced defects cause a large generation current inside the SiGe diodes, a behavior that is dominant in the full temperature range investigated (20°C

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Strained-silicon MOSFETs of low leakage current and high breakdown voltage for analog applications

Cited by 9 publications

References 0 publications

Stability of strain in Si layers formed on SiGe/Si(110) heterostructures

Stability of strain in Si layers formed on SiGe/Si(110) heterostructures

Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer Substrates

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