Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

We study three-dimensional massive gravity formulated as a theory with two dynamical metrics, like the f -g theories of Isham-Salam and Strathdee. The action is parity preserving and has no higher derivative terms. The spectrum contains a single massive graviton. This theory has several features discussed recently in TMG and NMG. We find warped black holes, a critical point, and generalized Brown-Henneaux boundary conditions.

Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs

“…First, under a high electric field, λ is assumed to be insensitive to the strain. This assumption is also supported by our previous studies [5], [6]. In addition, another parameter l is proportional to the gate oxide (t ox 1/3 ) [9] and only plays a minor role in the IIE because compared to control Si, the t ox variation due to the increase in the Si cap layer is estimated to be about 1.3 nm.…”

“…4, showing the increase in I B with increasing I D . Through the source terminal floating [5], the excess diode leakage current has markedly smaller effect on the I B caused by impact ionization process, as shown in Fig. 5.…”

Experimental Analysis of Anisotropic Impact Ionization in (110) Surface pMOSFETs

“…[5], [6]. In addition, through the source terminal floating technique [7], the excess diode leakage current even at the large drain voltage (V D ) has markedly smaller effect on the substrate current (I B ) caused by impact ionization process (not shown here). Thus, the impact ionization multiplication coefficient M-1 as a function of V D is approximately the ratio of the I B to I D , that is, M-1(V D )≈ I B /I D .…”

Investigation of Enhanced Impact Ionization in Uniaxially Strained Si n-Channel Metal Oxide Semiconductor Field Effect Transistor

“…Recently, several research groups have reported strain-dependent impact ionization. [3][4][5][6][7][8][9][10] In fact, a reduction in the breakdown voltage of silicon-on-insulator (SOI) MOSFETs with the application of uniaxial strain has been reported. 3,4) As was extensively studied for biaxially strained Si on a SiGe virtual substrate, the impact ionization threshold , which is determined by the band gap and the mean free path of carriers, is reduced by the tensile strain due to the narrowing of the band gap.…”