Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs

Huang, Po-Chin; Kang, Tsung-Kuei; Sa, Y. H.; Wu, Sean; Chang, Shoou‐Jinn

doi:10.7567/ssdm.2008.p-3-7

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials 2008

DOI: 10.7567/ssdm.2008.p-3-7

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Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs

Po-Chin Huang¹,

Tsung-Kuei Kang²,

Y. H. Sa³

et al.

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Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs

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References 6 publications

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