Strain-Tunable Quantum Integrated Photonics

Elshaari, Ali W.; Büyüközer, Efe; Zadeh, Iman Esmaeil; Lettner, Thomas; Zhao, Peng; Schöll, Eva; Gyger, Samuel; Reimer, Michael E.; Dalacu, Dan; Poole, Philip J.; Jöns, Klaus D.; Zwiller, Val

doi:10.1021/acs.nanolett.8b03937

Cited by 69 publications

(62 citation statements)

References 56 publications

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“…To address this issue, methods for tuning emitter properties are critical for generating identical photons, [ 3 ] and for coupling to high‐quality factor photonic resonators, where tuning magnitudes must be comparable to or greater than the cavity linewidths. [ 4 ]…”

Section: Figurementioning

confidence: 99%

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

et al. 2020

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favorable quantum efficiencies. [8] However, the emitters have been shown to be susceptible to environmental influences, which lead to extreme inhomogeneity in their emission properties, [9] including a broad, continuous spectral range of zero phonon lines spanning from the deep ultraviolet to the near infrared. [10] Consequently, reliable tuning methods for controlling the emission properties are paramount for their implementation in quantum photonic applications.Initial reports on tuning of hBN emitters employed voltage-controlled Stark shift devices and hydrostatic pressure. [11] Strainbased tuning of hBN defects has also been investigated using either the application of surface acoustic waves [12] or mechanical deflection of solid beams that translated vertical displacements to primarily horizontal strain tensors. [13] However, contribution from both vertical and horizontal strain components in previous studies has precluded direct analysis of the in-plane response to strain, which is especially critical for 2D materials. In this work, we employ high degrees of tensile strain to tune the emission of hBN SPEs and achieve record tuning magnitudes for a layered material of up to 20 nm (65 meV). Unlike all previous reports, we take advantage of large-area (approximately few square millimeters) ultrathin hBN films (≈10 nm) that host a variety of SPEs. [14] These samples are amenable to the direct application of tensile strain (as is detailed below), and we report both red and blue spectral shifts, relating our results to modifications of the defect energy level manifold and corresponding coupling to the bulk phonon bath. We demonstrate a rotation of the optical dipole in select SPEs, suggesting the presence of a second excited state. A theoretical model to describe strain tuning the emission frequency of SPEs in hBN is fully derived and further expanded to suggest that dipole rotation occurs via the influence of this additional energy level. The ability to tune emission frequency and additional photophysical characteristics of emitters offers a promising route to tailor lightmatter interactions in these systems. [15] Strain experiments were performed on hBN films grown by chemical vapor deposition (CVD) on a copper foil to a thickness of ≈7 nm. [14a] Additional characterization and properties of the hBN films can be found elsewhere. [14a] The films were transferred from the copper foil using a polymer-assisted (poly(methyl methacrylate) (PMMA) wet-transfer process to a poly(dimethylsiloxane) (PDMS) slab of 2.7 cm in length and ≈200 µm thick (cf. Experimental Section). The hBN/PDMS slab was secured in a mechanical straining device and mounted for optical characterization via confocal microscopy, as shown in Figure 1a. The PDMS slab was subject to varying degrees of Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, tensile strain is app...

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Section: Figurementioning

confidence: 99%

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

et al. 2020

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“…Another effective technique for the pick-and-place approach is using a sharp micro-probe [56, 101,102,110,111] In particular, the latter environment significantly improves the alignment accuracy over the transfer printing method. Additionally, using the probe tip, it is possible to change the emitter position for better alignment accuracy even after integration.…”

Section: Pick-and-placementioning

confidence: 99%

Hybrid integration methods for on-chip quantum photonics

Kim

Aghaeimeibodi

Carolan

et al. 2020

Optica

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The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of non-classical light in a phase stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this article, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters. PHOTONIC INTEGRATED CIRCUIETS FOR QUANTUM PHOTONICSPICs provide a compact, phase stable, and high-bandwidth platform to transmit, manipulate, and detect light on-chip. By leveraging advances in semiconductor manufacturing for classical communication, PICs have been demonstrated with over a thousand active components in a few square mm [50]. Now, with many foundries offering multi-26. I. Aharonovich, D. Englund, and M. Toth, "Solid-state single-photon emitters," Nat. Photonics 10, 631 (2016) , "Neardeterministic activation of room-temperature quantum emitters in hexagonal boron nitride," Optica 5, 1128-1134 (2018)

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“…However, here a butt coupling method between the quantum emitters and SiN waveguide was used reducing the theoretical coupling efficiency from 37% to 1%. In further studies of the same group, it was shown that silicon nitride waveguides can be directly fabricated on a piezoelectric substrate (PMN‐PT) . This made the tuning of the emission energy via an applied strain field up to 1.6 nm feasible.…”

Section: Hybrid Quantum Photonic Circuitsmentioning

confidence: 99%

Semiconductor Quantum Dots for Integrated Quantum Photonics

et al. 2019

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Quantum mechanics promises to have a strong impact on many aspects of research and technology, improving classical analogues via purely quantum effects. A large variety of tasks are currently under investigation, for example, the implementation of quantum computing, sensing, metrology, and communication. From a general perspective, in a similar way as classical computing benefited by the reduction of the device footprint, enabling the realization of highly complex chips, a range of quantum applications will sensibly improve thanks to the successful realization of on-chip quantum photonics. Conversely to bulky table-top experiments, it would be very advantageous to transfer all required functionalities on the same quantum photonic chip. The key elements for quantum photonic circuits are on-demand nonclassical light sources, a versatile photonic logic, the ability to store quantum information, and highly efficient detectors, directly integrated on-chip. Among several systems capable of the efficient generation of singleand indistinguishable photons, quantum dots are rapidly establishing as one of the most appealing candidates. This paper reviews the recent progress in the on-chip integration of quantum-dot-based nonclassical light sources as well as in the development of the main building blocks, either integrated monolithically or hybridly on a compact and scalable platform. IntroductionFrom the foundation of quantum mechanics in the early 20th century to explain fundamental physical observations, over the development of transistors and lasers in the 1950s and 1960s, the second quantum revolution is now in full swing. The driving force behind this continuing "quantum footrace" are quantum mechanical effects based on superposition and entanglement that can lead to profound changes. Especially in the field of quantum information science, dramatic improvements are expected in terms of increased computational speed and communication security if compared with classical counterparts.Talking about quantum supremacy, two problems-Grover's algorithm for the efficient search in large unsorted databases and Shor's algorithm for the prime factorization of large integers-are frequently mentioned. [1][2][3] Grover's quantum search algorithm can find an element of a search space M in O( √ M) operations compared to the best known classical algorithms approximately requiring O(M) steps. [4] Shor's algorithm can prime factorize large integers with N bits in polynomial speed compared to the exponential scaling of classical algorithms. Currently, several cryptography schemes in electronic communication systems rely on the difficulty of prime factorization as its security method. Consequently, a quantum computer could break the cryptographic keys quickly by calculating or searching exhaustively all key possibilities, which may allow an eavesdropper to intercept the communication channel. [5] However, quantum key distribution schemes can be alternatively used, which are based on the secure exchange of a cryptographic key between remote...

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Strain-Tunable Quantum Integrated Photonics

Cited by 69 publications

References 56 publications

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

Strain‐Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

Hybrid integration methods for on-chip quantum photonics

Semiconductor Quantum Dots for Integrated Quantum Photonics

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