Photonic quantum technologies such as quantum cryptography [1], photonic quantum metrology [2][3][4], photonic quantum simulators and computers [5][6][7] will largely benefit from highly scalable and small footprint quantum photonic circuits. To perform fully on-chip quantum photonic operations, three basic building blocks are required: single-photon sources, photonic circuits and single-photon detectors [8].Highly integrated quantum photonic chips on silicon and related platforms have been demonstrated incorporating only one [9] or two [10] of these basic building blocks.Previous implementations of all three components were mainly limited by laser stray light, making temporal filtering necessary [11] or required complex manipulation to transfer all components onto one chip [12]. So far, a monolithic, simultaneous implementation of all elements demonstrating single-photon operation remains elusive.Here, we present a fully-integrated Hanbury-Brown and Twiss setup on a micron-sized footprint, consisting of a GaAs waveguide embedding quantum dots as single-photon sources, a waveguide beamsplitter and two superconducting nanowire single-photon detectors. This enables a second-order correlation measurement at the single-photon level under both continuous-wave and pulsed resonant excitation.Up to now, most quantum waveguide (WG) circuits have been fabricated from glass-based and Si-based materials. Both material platforms do not allow monolithic integration of deterministic single-photon sources. The used InGaAs/GaAs material system benefits from the capability of directly integrating on-demand non-classical light sources, namely semiconductor quantum dots (QDs) [13]. These emitters reach state-of-the-art performances in terms of single and indistinguishable photon emission, typically via a resonant excitation scheme [14]. Within this platform, single-photon emission in combination with single-mode WGs and beamsplitters (BSs) was demonstrated with and without resonant excitation [15][16][17][18][19][20]. Moreover, the implementation of superconducting nanowire single-photon detectors (SNSPDs) was successfully demonstrated on this material system [11,21,22]. These detectors represent the most suitable choice for working at the single photon level due to their potential near-unity detection efficiency (93 % [23]), low dark count rate and very high time resolution with intrinsic timing jitters in the ps range [24,25].On the other hand, for silicon and silicon-related quantum photonic platforms a high degree of device complexity was reached, but efficient on-demand non-classical light sources are still missing [10]. By using parametric down conversion sources, only probabilistic singlephoton emission is possible and the amount of stray light coming from the intense pump laser prevented so far the implementation of single-photon detectors on the same chip.Electrically-driven sources may solve this issue [12,26], but the used non-resonant excitation scheme typically leads to the emission of photons with a limited degree of i...

Quantum mechanics promises to have a strong impact on many aspects of research and technology, improving classical analogues via purely quantum effects. A large variety of tasks are currently under investigation, for example, the implementation of quantum computing, sensing, metrology, and communication. From a general perspective, in a similar way as classical computing benefited by the reduction of the device footprint, enabling the realization of highly complex chips, a range of quantum applications will sensibly improve thanks to the successful realization of on-chip quantum photonics. Conversely to bulky table-top experiments, it would be very advantageous to transfer all required functionalities on the same quantum photonic chip. The key elements for quantum photonic circuits are on-demand nonclassical light sources, a versatile photonic logic, the ability to store quantum information, and highly efficient detectors, directly integrated on-chip. Among several systems capable of the efficient generation of singleand indistinguishable photons, quantum dots are rapidly establishing as one of the most appealing candidates. This paper reviews the recent progress in the on-chip integration of quantum-dot-based nonclassical light sources as well as in the development of the main building blocks, either integrated monolithically or hybridly on a compact and scalable platform. IntroductionFrom the foundation of quantum mechanics in the early 20th century to explain fundamental physical observations, over the development of transistors and lasers in the 1950s and 1960s, the second quantum revolution is now in full swing. The driving force behind this continuing "quantum footrace" are quantum mechanical effects based on superposition and entanglement that can lead to profound changes. Especially in the field of quantum information science, dramatic improvements are expected in terms of increased computational speed and communication security if compared with classical counterparts.Talking about quantum supremacy, two problems-Grover's algorithm for the efficient search in large unsorted databases and Shor's algorithm for the prime factorization of large integers-are frequently mentioned. [1][2][3] Grover's quantum search algorithm can find an element of a search space M in O( √ M) operations compared to the best known classical algorithms approximately requiring O(M) steps. [4] Shor's algorithm can prime factorize large integers with N bits in polynomial speed compared to the exponential scaling of classical algorithms. Currently, several cryptography schemes in electronic communication systems rely on the difficulty of prime factorization as its security method. Consequently, a quantum computer could break the cryptographic keys quickly by calculating or searching exhaustively all key possibilities, which may allow an eavesdropper to intercept the communication channel. [5] However, quantum key distribution schemes can be alternatively used, which are based on the secure exchange of a cryptographic key between remote...

In the present work, we investigate the coupling of deterministically pre-selected In(Ga)As/GaAs quantum dots (QDs) to low Q circular Bragg grating cavities by employing a combination of state-of-the-art low-temperature in-situ optical lithography and electron-beam lithography. The spatial overlap between the cavity mode and quantum emitter is ensured through the accurate determination of the QD position via precise interferometric position readout. Simultaneously, the high precision of the electron-beam lithography is exploited for the cavity fabrication. In order to optimize the spectral overlap, prior to cavity fabrication, finite-difference time-domain simulations are performed to estimate the spectral position of the cavity mode. A Purcell factor of 2 together with an increased count rate is reported for a deterministically positioned cavity where the emission line is detuned by 3.9 nm with respect to the cavity mode. This non-negligible Purcell enhancement for large detunings and, thus, the large range where this can be achieved points towards the possibility of using the cavity for the simultaneous enhancement of spectrally distinct transitions from the same quantum emitter located spatially in the mode maximum. Furthermore, investigations on the bending of the cavity membrane and the effects on the cavity mode and QD emission are presented.

In the present study, we report on the deterministic integration of quantum dots, emitting in the telecom O-band, into wet-chemically fabricated Gaussian-shaped microlenses which exhibit a surface quality comparable to epi-ready wafers. The slow wet-chemical etching rate enables us to gain control of the lens aspect-ratio and the vertical position with respect to the quantum dot, allowing us to engineer the far field shape to better match the acceptance profile of single-mode fibers. Maximum light enhancement values of around 10 to 16 could be achieved for collection numerical apertures from 0.6 to 0.2, respectively. The current results constitute an important step forward in transferring state-of-the-art performances achieved in the near-infrared regime to the key wavelengths for long distance fiber communication.

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On-chip quantum photonics is a promising route toward the implementation of complex photonic architectures on a small footprint. Therefore, different photonic components demonstrated for off-chip operation must be realized in an integrated manner. An essential building block for the realization of this goal is the integration of efficient on-demand single-photon sources within waveguide circuits. Here, we address this challenge by demonstrating the Purcell-enhanced single-photon emission from an In(Ga)As quantum dot coupled to a high-Q cavity-waveguide device. The combination with a piezoelectric actuator further enables the strain-induced emission energy tuning of the quantum dot as well as the cavity mode. We observe wavelength shifts up to 0.85 nm for the quantum dot, with a differential tuning factor of four between emitter and cavity. This allows for the full compensation of the spectral mismatch between a selected quantum dot and the cavity resonance. A nearly twofold enhancement of the spontaneous emission rate is observed at resonance with the on-demand generation of single photons. This demonstration of a strain-tunable emitter in a waveguide-coupled cavity device represents an essential building block for large scale quantum photonic circuits, especially if combined in the future with miniaturization approaches based on recently developed micromachined piezoelectric actuators.

In the present study, we developed a fabrication process of an electrically driven single-photon LED based on InP QDs emitting in the red spectral range, the wavelength of interest coinciding with the high efficiency window of Si APDs. A deterministic lithography technique allowed for the pre-selection of a suitable QD, here exclusively operated under electrical carrier injection. The final device was characterized under micro-electroluminescence in direct current, as well as in pulsed excitation mode. In particular, under pulsed excitation of one device, single-photon emission of a spectral line, identified as an exciton, has been observed with g (2) raw (0) = 0.42 ± 0.02, where the non-zero g (2) -value is mainly caused by background contribution in the spectrum and re-excitation processes due to the electrical pulse length. The obtained results constitute an important step forward in the fabrication of electrically driven single-photon sources, where deterministic lithography techniques can be used to sensibly improve the device performances. In principle, the developed process can be extended to any desired emitter wavelength above 600 nm up to the telecom bands.

The cover image shows an artistic impression of a fully on‐chip quantum photonic circuit based on semiconductor quantum dots (QDs) as nonclassical light sources. The QDs are directly integrated within a network of waveguides, beam splitters and phase shifters for the passive and active manipulation of the quantum states of light. The integrated superconducting nanowire single‐photon detectors make the on‐chip detection of single photons feasible. For further information see the review by Stefan Hepp and co‐workers, article number 1900020. (Image design by S. Kolatschek.)