Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

Cavalcoli, Daniela; Minj, Albert; Fazio, Maria Antonietta; Cros, A.; Heuken, M.

doi:10.1016/j.apsusc.2020.146016

Cited by 3 publications

(2 citation statements)

References 39 publications

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“…There is an increasing demand for robust structural and electrical characterization at the nanoscale to improve our understanding of current transport in ultrascaled devices and low-dimensional nanostructures for a broad range of applications in logic, nonvolatile memory, and optoelectronics. Some of the notable examples include quantitative analysis of ultrashallow junctions in field effect transistors, − reconfigurable ferroelectric domain walls, − trapping/de-trapping of defects in III-Vs, − and so forth by various modes of scanning probe techniques. In this context, a nanometer-sized probe and the versatile nature of atomic force microscopy (AFM) can offer the required high resolution.…”

Section: Introductionmentioning

confidence: 99%

Surface Contamination: A Natural Way toward High-Resolution Electric Force Microscopy in Contact-Resonant Mode

et al. 2020

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Electric force microscopy (EFM)-based methods have the capacity to probe surface potential, dielectric properties, and surface charges. It can be robustly used for analyzing charge-transfer mechanisms in nanostructures by measuring the electrostatic forces between a sample surface and a tip. The highest achievable resolution for conventional EFM under ambient conditions is defined mainly by the tip–sample separation d, which is limited by the “jump-to-contact” effect. In this paper, the contact-resonance EFM methodology operating at close to zero d is demonstrated, which is applicable to semiconductors, metals, and dielectrics. Being implemented at the contact resonance frequency of the atomic force microscopy probe in contact with the surface, it allows an improvement in the sensitivity and boosting of the signal-to-noise ratio and it enables the condition required for high-resolution imaging. Furthermore, the critical role of nonconducting organic compounds to achieve a smaller d, and subsequently enhancing the electrostatic signal, is addressed.

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Section: Introductionmentioning

confidence: 99%

Surface Contamination: A Natural Way toward High-Resolution Electric Force Microscopy in Contact-Resonant Mode

et al. 2020

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“…The value of C high was chosen by comparing the most common n-GaN devices, consulting several references, [24][25][26] and approaching the doping values of the study by Zhang et al 35 Here, R p/n is the ratio between p-GaN and n-GaN concentrations, serving as a proportion indicator between carriers to correlate electrical and optical properties in the device, see Table I. Although a high impurity concentration (Si or Mg) inside any compound semiconductor results in epilayer morphology degradation and surface roughness, the small indium content and low Si impurities used in our study avoids concerns on this issue as discussed by Cavalcoli et al 36 The high amount of Mg impurities in our case also does not affect the surface morphology due to the small thickness of the n-GaN layer used here. For thicker layers, a proper carrier gas technique during growth can be used to smooth the surface and avoid the Mg diffusion into the active layer.…”

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confidence: 98%

Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode

Zarate-Galvez

García-Barrientos

Lastras-Martı́nez

et al. 2023

ECS J. Solid State Sci. Technol.

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We conduct a comprehensive study to investigate the feasibility of achieving high internal quantum efficiency (IQE) and wavelength stability in an InGaN/GaN blue light-emitting diode (LED) through numerical simulations with different doping concentrations. To ensure accurate calculations, we emulated the structure of an LED, fabricated on freestanding GaN with low defect density, abrupt interfaces, and high-performing characteristics, which resemble ideal conditions. Our objective is to determine the optimal doping concentration of the claddings using the Quantum Drift-Diffusion (QDD) model. We tested three concentrations (C_{low}, C_{middle}, C_{high}), and found that C_{middle} produced the highest IQE of 82.5%, the most stable wavelength \hat{\lambda}=\left(457.0\pm1.2\right)\ nm in the range of (0.08 – 63.25) mA, an optical power of \mathbb{P}=14.76\ mW/s, and a forward voltage of V_{middle}=3.81\ V at 20 mA. We suggest that using this concentration leads to the parameters closest to those of the reference device.

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Defect evolution induced by low-dose neutron irradiation and elastoplastic deformation mechanism of indium-doped GaN materials

Li,

Shang

2024

Ceramics International

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Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

Cited by 3 publications

References 39 publications

Surface Contamination: A Natural Way toward High-Resolution Electric Force Microscopy in Contact-Resonant Mode

Surface Contamination: A Natural Way toward High-Resolution Electric Force Microscopy in Contact-Resonant Mode

Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode

Defect evolution induced by low-dose neutron irradiation and elastoplastic deformation mechanism of indium-doped GaN materials

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