Optimization of Doping Concentration to Obtain High Internal Quantum Efficiency and Wavelength Stability in An InGaN/GaN Blue Light-Emitting Diode

Abstract

We conduct a comprehensive study to investigate the feasibility of achieving high internal quantum efficiency (IQE) and wavelength stability in an InGaN/GaN blue light-emitting diode (LED) through numerical simulations with different doping concentrations. To ensure accurate calculations, we emulated the structure of an LED, fabricated on freestanding GaN with low defect density, abrupt interfaces, and high-performing characteristics, which resemble ideal conditions. Our objective is to determine the optimal doping concentration of the claddings using the Quantum Drift-Diffusion (QDD) model. We tested three concentrations (C_{low}, C_{middle}, C_{high}), and found that C_{middle} produced the highest IQE of 82.5%, the most stable wavelength \hat{\lambda}=\left(457.0\pm1.2\right)\ nm in the range of (0.08 – 63.25) mA, an optical power of \mathbb{P}=14.76\ mW/s, and a forward voltage of V_{middle}=3.81\ V at 20 mA. We suggest that using this concentration leads to the parameters closest to those of the reference device.