Strain-modulated transport properties of Cu/ZnO-nanobelt/Cu nanojunctions

Sun, Xu; Gu, Yousong; Wang, Xueqiang; Zhang, Zheng

doi:10.1002/pssb.201451550

Cited by 4 publications

(4 citation statements)

References 49 publications

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“…nanowire or nanobelt based sensors 29,[32][33][34][35][36][37][38][39][40][41][42][43] . The PTSS based on the Ag/HfO 2 /n-ZnO shows the obvious advantages than other sensors (including SSS), demonstrating its great potential in strain sensing.…”

Section: Dynamic Current Of Ptss and Sss Response To Applied Strainmentioning

confidence: 99%

Highly sensitive strain sensors based on piezotronic tunneling junction

Wen

et al. 2022

Nat Commun

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Piezotronics with capacity of constructing adaptive and seamless interactions between electronics/machines and human/ambient are of value in Internet of Things, artificial intelligence and biomedical engineering. Here, we report a kind of highly sensitive strain sensor based on piezotronic tunneling junction (Ag/HfO2/n-ZnO), which utilizes the strain-induced piezoelectric potential to control the tunneling barrier height and width in parallel, and hence to synergistically modulate the electrical transport process. The piezotronic tunneling strain sensor has a high on/off ratio of 478.4 and high gauge factor of 4.8 × 105 at the strain of 0.10%, which is more than 17.8 times larger than that of a conventional Schottky-barrier based strain sensor in control group as well as some existing ZnO nanowire or nanobelt based sensors. This work provides in-depth understanding for the basic mechanism of piezotronic modulation on tunneling junction, and realizes the highly sensitive strain sensor of piezotronic tunneling junction on device scale, which has great potential in advanced micro/nano-electromechanical devices and systems.

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Section: Dynamic Current Of Ptss and Sss Response To Applied Strainmentioning

confidence: 99%

Highly sensitive strain sensors based on piezotronic tunneling junction

Wen

et al. 2022

Nat Commun

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“…While P OOP is down, the GF of the PM-FEST device reaches a maximum of 6.8 × 10 3 under compression, and 1.1 × 10 4 under tension. Compared with devices based on piezoelectric semiconductor materials, [5,7,18,[35][36][37][38][39][40][41][42][43][44][45][46][47] our device presents with an outstanding high GF (Figure 3e, Tables S1 and S2, Supporting Information) and these results indicate the advantages of ferroelectric semiconductor 𝛼-In 2 Se 3 with a large piezoelectric coefficient for piezotronic devices.…”

Section: Resultsmentioning

confidence: 91%

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

Chi,

Zhao,

Zhang

et al. 2023

Adv Funct Materials

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Piezotronics is the coupling effect of the piezoelectric and semiconductor properties; however, the piezoelectric constant of the piezoelectric semiconductor is relatively small while the ferroelectric materials with large piezoelectric constant typically possess weak semiconductor properties, thus limiting the effective coupling coefficient of the piezotronic materials and devices. Here, a piezotronics and magnetic dual‐gated ferroelectric semiconductor transistor (PM‐FEST) is fabricated by Terfenol‐D, aluminum oxide (Al2O3), and ferroelectric semiconductor α‐In2Se3, which has a large piezoelectric coefficient, room‐temperature ferroelectricity, and dipole locking. The charge carrier transport and corresponding drain current of the PM‐FEST can be directly modulated by either the applied magnetic field or external strain. At a low magnetic field (<200 mT), the maximum current on/off ratio of α‐In2Se3 based PM‐FEST is as high as 1700%. Compared with traditional piezotronic devices, the PM‐FEST demonstrates a higher gauge factor (2.3 × 104) than that of the piezoelectric semiconductors. This work provides a possibility of realizing magnetism‐modulated electronics in semiconductors by exploiting the coupling of piezotronics and magnetostriction.

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“…Combining the strain effect with other influencing factors such as electrodes [93,94] and size effect [42], one can gain a more comprehensive picture of the strain controllability on the performances of ZnO piezoelectric nanodevices, as reported by research based on ab initio calculations. For example, Zhu et al [42] reported size-dependent amplification of tunnel conductance through ZnO tunnel junctions by strain reversal.…”

Section: Strain-tunable Transport Behavior In Zno Tunnel Junctionsmentioning

confidence: 99%

A review of recentab initiostudies on strain-tunable conductivity in tunnel junctions with piezoelectric, ferroelectric and multiferroic barriers

Jiang

Chen

Zheng

2017

Semicond. Sci. Technol.

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Functional tunnel junctions are promising for developing novel electronic devices due to their combination of quantum-mechanical tunneling and the unique characteristics of a nanometerthick functional film. Much research has been reported on the nanoscale properties, fabrication methods and applications of tunnel junctions with piezoelectric, ferroelectric, multiferroic barriers both in theory and experiment. The electronic transport properties of functional tunnel junctions can be significantly tuned by means such as switching polarization and applying strain, leading to a giant variation in tunneling electroresistance. Such tunability has been predicted by ab initio studies and verified by experiments, suggesting huge application prospects. In this review, we mainly focus on recent progress in ab initio studies on the strain-tunable transport properties in piezoelectric, ferroelectric and multiferroic tunnel junctions. The main content of this review include an introduction to the physics of the three kinds of tunnel junction and the basic principle of ab initio studies, the physical mechanisms, and important results on the straintunable transport properties of tunnel junctions. Prospects and challenges of this field are also highlighted.

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Strain-modulated transport properties of Cu/ZnO-nanobelt/Cu nanojunctions

Cited by 4 publications

References 49 publications

Highly sensitive strain sensors based on piezotronic tunneling junction

Highly sensitive strain sensors based on piezotronic tunneling junction

A Piezotronic and Magnetic Dual‐Gated Ferroelectric Semiconductor Transistor

A review of recentab initiostudies on strain-tunable conductivity in tunnel junctions with piezoelectric, ferroelectric and multiferroic barriers

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