Strain-mediated 180° switching in CoFeB and Terfenol-D nanodots with perpendicular magnetic anisotropy

Wang, Qianchang; Xu, Lei; Liang, Cheng-Yen; Barra, Anthony; Domann, John P.; Lynch, Christopher S.; Sepulveda, Abdon E.; Carman, Greg P.

doi:10.1063/1.4978270

Cited by 56 publications

(41 citation statements)

References 39 publications

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“…Due to a limited number of single-phase multiferroic compounds operating at room temperature, composite multiferroics containing ferroelectric (or piezoelectric) and ferromagnetic components have been considered as viable candidates [8][9][10][11]. It was shown that composite multiferroic materials often have much larger magnetoelectric coupling compared to their single-phase counterparts, resulting from strain-mediated [12][13][14][15] or charge-mediated [16][17][18][19][20][21] coupling mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Magnetoelectric Effect at the Ni/HfO2 Interface Induced by Ferroelectric Polarization

et al. 2019

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Driven by the technological importance of the recently discovered ferroelectric HfO 2 , we explore a magnetoelectric effect at the HfO 2-based ferroelectric-ferromagnetic interface. Using density-functionaltheory calculations of the Ni/HfO 2 /Ni (001) heterostructure as a model system, we predict a stable and sizable ferroelectric polarization in a few-nm-thick HfO 2 layer. For the Ni/HfO 2 interface with opposite polarization directions (pointing to or away from the interface), we find a sizable difference in the interfacial Ni-O bonding, resulting in dissimilar degrees of depletion of the electron density around the interface. The latter affects the relative population of the exchange-split majority and minority spin bands at the interface and thus the interfacial magnetic moments. The sizable change in the interface magnetization with ferroelectric polarization reversal of HfO 2 manifests a significant ferroelectrically induced magnetoelectric effect at the Ni/HfO 2 interface. Our results reveal promising prospects of ferroelectric-ferromagnetic composite multiferroics based on HfO 2-based ferroelectric materials.

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Section: Introductionmentioning

confidence: 99%

Magnetoelectric Effect at the Ni/HfO2 Interface Induced by Ferroelectric Polarization

et al. 2019

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“…Computationally, there are several schemes [16][17][18][19][20][21][22][23] for achieving voltage-driven in-plane magnetization reversal under zero external magnetic fields mediated by strain 16,18,20,22,23 or exchange coupling. 17,21 By contrast, there is only one approach [24][25][26][27] for achieving voltage-driven perpendicular magnetization reversal under zero external magnetic fields, that is, using pulse-voltage-induced transient strains (through converse piezoelectric effect) to temporarily switch the perpendicular magnetic EA to the in-plane direction. Generally, a strain-mediated voltage-driven magnetization switching (in-plane or perpendicular, 90°or 180°) involves the following four coupled dynamic processes as outlined in Hu et al 2 : (i) establishment of the electric field in the piezoelectric, (ii) creation/release of strains, (iii) transfer of strain across the magnetic/piezoelectric interface, and (iv) strain-enabled magnetization switching in the magnet.…”

Section: Introductionmentioning

confidence: 99%

“…Generally, a strain-mediated voltage-driven magnetization switching (in-plane or perpendicular, 90°or 180°) involves the following four coupled dynamic processes as outlined in Hu et al 2 : (i) establishment of the electric field in the piezoelectric, (ii) creation/release of strains, (iii) transfer of strain across the magnetic/piezoelectric interface, and (iv) strain-enabled magnetization switching in the magnet. However, existing computational studies of strain-mediated voltage-driven magnetization reversal (that is, 180°switching) 16,[18][19][20][22][23][24][25][26][27] either did not consider the influence of the dynamics of process (ii) on process (iv) 16,[18][19][20][22][23][24][25][26] or did not consider the influence of the stiffness damping coefficient of the piezoelectric when modeling the dynamics of process (ii). 27 Furthermore, most of these studies 16,[18][19][20]22,[24][25][26][27] did not consider the influence of thermal fluctuations on process (iv).…”

Section: Introductionmentioning

confidence: 99%

On the speed of piezostrain-mediated voltage-driven perpendicular magnetization reversal: a computational elastodynamics-micromagnetic phase-field study

Ren

Chen

et al. 2017

NPG Asia Mater

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By linking the dynamics of local piezostrain to the dynamics of local magnetization, we computationally analyzed the speed of a recently proposed scheme of piezostrain-mediated perpendicular magnetization reversal driven by a voltage pulse in magnetoelectric heterostructures. We used a model heterostructure consisting of an elliptical ultrathin amorphous Co 20 Fe 60 B 20 on top of a polycrystalline Pb(Zr,Ti)O 3 (PZT) thin film. We constructed a diagram showing the speed of perpendicular magnetization reversal as a function of the amplitude of the applied voltage pulse and the stiffness damping coefficient of PZT film. In addition, we investigated the influence of thermal fluctuations on the switching speed. The analyses suggest that the switching time remains well below 10 ns and that the energy dissipation per switching is on the order of femtojoule. The present computational analyses can be generally used to predict the speed of piezostrain-enabled magnetization switching and magnetic domain-wall motion, which critically determines the response time of corresponding piezostrain-enabled spintronic and magnonic devices.

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“…Lastly, the energy estimates provided in this manuscript neglect substrate clamping effects, which can be substantial with improperly designed systems. However, this issue has been considered by other researchers (e.g., Ref [38]), suggesting values below 275 aJ are feasible if the system is properly designed.…”

Section: Resultsmentioning

confidence: 98%

Voltage control of magnetic monopoles in artificial spin ice

Chavez¹,

Barra²,

Carman³

2018

J. Phys. D: Appl. Phys.

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Current research on artificial spin ice (ASI) systems has revealed unique hysteretic memory effects and mobile quasi-particle monopoles controlled by externally applied magnetic fields. Here, we numerically demonstrate a strain-mediated multiferroic approach to locally control the ASI monopoles. The magnetization of individual lattice elements is controlled by applying voltage pulses to the piezoelectric layer resulting in strain-induced magnetic precession timed for 180° reorientation. The model demonstrates localized voltage control to move the magnetic monopoles across lattice sites, in CoFeB, Ni, and FeGa based ASI's. The switching is achieved at frequencies near ferromagnetic resonance and requires energies below 620 aJ. The results demonstrate that ASI monopoles can be efficiently and locally controlled with a strainmediated multiferroic approach.

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Strain-mediated 180° switching in CoFeB and Terfenol-D nanodots with perpendicular magnetic anisotropy

Cited by 56 publications

References 39 publications

Magnetoelectric Effect at the Ni/HfO2 Interface Induced by Ferroelectric Polarization

Magnetoelectric Effect at the Ni/HfO2 Interface Induced by Ferroelectric Polarization

On the speed of piezostrain-mediated voltage-driven perpendicular magnetization reversal: a computational elastodynamics-micromagnetic phase-field study

Voltage control of magnetic monopoles in artificial spin ice

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