In this work, we experimentally demonstrate deterministic electrically driven, strain-mediated domain wall (DW) rotation in ferromagnetic Ni rings fabricated on piezoelectric [Pb(Mg1/3Nb2/3)O3]0.66-[PbTiO3]0.34 (PMN-PT) substrates. While simultaneously imaging the Ni rings with X-ray magnetic circular dichroism photoemission electron microscopy, an electric field is applied across the PMN-PT substrate that induces strain in the ring structures, driving DW rotation around the ring toward the dominant PMN-PT strain axis by the inverse magnetostriction effect. The DW rotation we observe is analytically predicted using a fully coupled micromagnetic/elastodynamic multiphysics simulation, which verifies that the experimental behavior is caused by the electrically generated strain in this multiferroic system. Finally, this DW rotation is used to capture and manipulate micrometer-scale magnetic beads in a fluidic environment to demonstrate a proof-of-concept energy-efficient pathway for multiferroic-based lab-on-a-chip applications.
Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.
Micromagnetic simulations of magnetoelastic nanostructures traditionally rely on either the Stoner-Wohlfarth model or the Landau-Lifshitz-Gilbert (LLG) model, assuming uniform strain (and/or assuming uniform magnetization). While the uniform strain assumption is reasonable when modeling magnetoelastic thin films, this constant strain approach becomes increasingly inaccurate for smaller in-plane nanoscale structures. This paper presents analytical work intended to significantly improve the simulation of finite structures by fully coupling the LLG model with elastodynamics, i.e., the partial differential equations are intrinsically coupled. The coupled equations developed in this manuscript, along with the Stoner-Wohlfarth model and the LLG (constant strain) model are compared to experimental data on nickel nanostructures. The nickel nanostructures are 100 × 300 × 35 nm single domain elements that are fabricated on a Si/SiO2 substrate; these nanostructures are mechanically strained when they experience an applied magnetic field, which is used to generate M vs H curves. Results reveal that this paper's fully-coupled approach corresponds the best with the experimental data on coercive field changes. This more sophisticated modeling technique is critical for guiding the design process of future nanoscale strain-mediated multiferroic elements, such as those needed in memory systems.
This paper presents an analytical model coupling Landau-Lifshitz-Gilbert micromagnetics with elastodynamics and electrostatics to model the response of a single domain magnetoelastic nano-element attached to a piezoelectric thin film (500 nm). The thin film piezoelectric is mounted on a Si substrate, globally clamping the film from in-plane extension or contraction. Local strain transfer to the magnetoelastic element is achieved using patterned electrodes. The system of equations is reduced to eight coupled partial differential equations as a function of voltage (V), magnetic potential ϕ, magnetic moments (m), and displacements (u), i.e., fully coupled material. The weak forms of the partial differential equations are solved using a finite element formulation. The problem of a Ni single domain structure (i.e., 150 nm × 120 nm × 10 nm) on a thin film (500 nm) piezoelectric transducer (PZT)-5H attached to an infinite substrate is studied. Discretization in the single domain structure is on the order of the exchange length (8.5 nm), providing spatial and temporal information on the local mechanical and magnetic fields. A −0.5 V potential is applied to a pair of surface electrodes, producing out-of-plane deformation and in turn straining the magnetoelastic single domain nanostructure in-plane. This strain is sufficient to reorient a single domain structure representative of an idealized memory element.
A micromagnetic and elastodynamic finite element model is used to compare the 180° out-of-plane magnetic switching behavior of CoFeB and Terfenol-D nanodots with perpendicular magnetic easy axes. The systems simulated here consist of 50 nm diameter nanodots on top of a 100 nm-thick PZT (Pby[ZrxTi1-x]O3) thin film, which is attached to a Si substrate. This allows voltage pulses to induce strain-mediated magnetic switching in a magnetic field free environment. Coherent and incoherent switching behaviors are observed in both CoFeB and Terfenol nanodots, with incoherent flipping associated with larger or faster applied switching voltages. The energy to flip a Terfenol-D memory element is an ultralow 22 aJ, which is 3–4 orders more efficient than spin-transfer-torque. Consecutive switching is also demonstrated by applying sequential 2.8 V voltage pulses to a CoFeB nanodot system with switching times as low as 0.2 ns.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.