On the speed of piezostrain-mediated voltage-driven perpendicular magnetization reversal: a computational elastodynamics-micromagnetic phase-field study

Ren, Ping; Hu, Jia Mian; Chen, Lei; Nan, Ce Wen

doi:10.1038/am.2017.97

Cited by 21 publications

(9 citation statements)

References 55 publications

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“…Magnetoelectrics, the history of which dates back to the 19th century, starting with their prediction [8] and implementation [9][10][11], are now very close to commercial use in various devices [12,13]. One of the most important advantages of magnetoelectric multiferroics is the ability to reduce, by several orders of magnitude, energy consumption for the switching of magnetic states in spintronic and memory devices; this decreases to femto-and even attojoules [14][15][16][17][18]. Despite extensive and intensive development in the last decade of both the physics and technology of magnetoelectric multiferroics [19][20][21][22][23][24][25][26][27][28], a window of opportunity remains open for discovering effects that can further expand the field of application and improve the characteristics of devices based on these materials.…”

Section: Introductionmentioning

confidence: 99%

Composite Multiferroic Terahertz Emitter: Polarization Control via an Electric Field

et al. 2022

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Electrical control of conjugate degrees of freedom in multiferroics provides the advantage of reducing energy consumption to femto-and even attojoules per switch in spintronics and memory devices. This is achieved through the development of technologies that make it possible to fabricate artificial materials with constantly improving properties. Here, we present the design, physics, and characteristics of a composite multiferroic spintronic emitter, which provides electrical control of the emitted terahertz (THz) wave polarization. The effect is due to electrical control of the magnetization in a high-quality magnetostrictive superlattice, TbCo2/FeCo, deposited on an anisotropic piezoelectric substrate. In our approach, several mechanisms are realized in the system simultaneously: the strain-mediated coupling of the magnetic and piezoelectric subsystems, which operate in the range of the spin-reorientation transition of the magnetic superlattice, and THz-wave generation in the superlattice by an optical femtosecond pulse. This provides flexibility and control of the set of parameters. We determine the magnetoelectric parameter, which is responsible for THz polarization control. Our results offer a significant fundamental insight into the physics of composite multiferroic systems that can be used for applications of multiferroicity, primarily for THz spintronic emitters. We believe that our findings represent a decisive step towards technologies for other types of spintronic and memory devices.

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Section: Introductionmentioning

confidence: 99%

Composite Multiferroic Terahertz Emitter: Polarization Control via an Electric Field

et al. 2022

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“…In magnetic random access memory (MRAM) technology write units are typically based on spin-torque or spin-orbit torque, while read operations are based on the magnetoresistance of magnetic tunnel junctions (MTJ). But there is increasing interest in voltage-driven units due to the potential for low power operation, both active and stand-by based on different types of magnetoelectric phenomena [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Equivalent Circuit for Magnetoelectric Read and Write Operations

et al. 2018

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We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use SPICE simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where the "1" and "0" states are not represented by states with net magnetization (like mx, my or mz) but by different easy axes, quantitatively described by (m 2x − m 2 y ) which switches from "0" to "1" through the write voltage. This change is directly detected as a read signal through the inverse effect. The use of (m 2x − m 2 y ) to represent a bit is a radical departure from the standard convention of using the magnetization (m) to represent information. We then show how the equivalent circuit can be used to build a device exhibiting tunable randomness and suggest possibilities for extending it to non-volatile memory with read and write capabilities, without the use of external magnetic fields or magnetic tunnel junctions.

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“…According to the previous reports [32,33], the magnetoelastic energy reflecting the coupling between the magnetization and elastic strains, is one of the energy contributions to the total free energy in strain-mediated multiferroic heterostructures. The magnetoelastic energy density can be expressed as [33,34]:…”

Section: Resultsmentioning

confidence: 99%

Vector analysis of electric-field-induced antiparallel magnetic domain evolution in ferromagnetic/ferroelectric heterostructures

Zhao¹,

Hu²,

Wu³

et al. 2021

J Adv Ceram

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Electric field (E-field) control of magnetism based on magnetoelectric coupling is one of the promising approaches for manipulating the magnetization with low power consumption. The evolution of magnetic domains under in-situ E-fields is significant for the practical applications in integrated micro/nano devices. Here, we report the vector analysis of the E-field-driven antiparallel magnetic domain evolution in FeCoSiB/PMN-PT(011) multiferroic heterostructures via in-situ quantitative magneto-optical Kerr microscope. It is demonstrated that the magnetic domains can be switched to both the 0° and 180° easy directions at the same time by E-fields, resulting in antiparallel magnetization distribution in ferromagnetic/ferroelectric heterostructures. This antiparallel magnetic domain evolution is attributed to energy minimization with the uniaxial strains by E-fields which can induce the rotation of domains no more than 90°. Moreover, domains can be driven along only one or both easy axis directions by reasonably selecting the initial magnetic domain distribution. The vector analysis of magnetic domain evolution can provide visual insights into the strain-mediated magnetoelectric effect, and promote the fundamental understanding of electrical regulation of magnetism.

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On the speed of piezostrain-mediated voltage-driven perpendicular magnetization reversal: a computational elastodynamics-micromagnetic phase-field study

Cited by 21 publications

References 55 publications

Composite Multiferroic Terahertz Emitter: Polarization Control via an Electric Field

Composite Multiferroic Terahertz Emitter: Polarization Control via an Electric Field

Equivalent Circuit for Magnetoelectric Read and Write Operations

Vector analysis of electric-field-induced antiparallel magnetic domain evolution in ferromagnetic/ferroelectric heterostructures

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