Strain Induced Metal–Insulator Transition of Magnetic SrRuO3 Single Layer in SrRuO3/SrTiO3 Superlattice

Huang, Angus; Hung, Sheng-Hsiung; Jeng, Horng‐Tay

doi:10.3390/app8112151

Cited by 5 publications

(4 citation statements)

References 53 publications

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“…The energy criteria was 1×10 −6 eV. To account for the electron correlations in d-orbitals, the on-site Coulomb repulsion U with U = 3.5 eV and J = 0.6 eV was concluded [58,59] using the rotationally invariant LDA+U method introduced by Liechtenstein et al [60]…”

Section: Methodsmentioning

confidence: 99%

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Zheng,

Fang,

Wen

et al. 2024

Adv Funct Materials

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Spin‐orbit torque resulting from non‐magnetic materials with strong spin‐orbit coupling enables electrically controlled magnetization switching, offering potential applications in ultralow‐power memory and logic devices. However, such switching of perpendicular magnetization usually requires an in‐plane magnetic field along the applied current direction, which limits its use. To address this challenge, an all‐oxide superlattice is designed and fabricated that show both the perpendicular magneto‐crystalline anisotropy and in‐plane magnetic anisotropies induced by interfacial engineering. The results demonstrate that the coexistence of perpendicular and in plane magnetic anisotropy breaks the symmetry and thus enables the pure electrical switching of perpendicular magnetization.

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Section: Methodsmentioning

confidence: 99%

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Zheng,

Fang,

Wen

et al. 2024

Adv Funct Materials

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“…The influences of the lattice anisotropy (c/a) and the oxygen octahedral rotation are examined according to the experimentally measured values in Figure 3. Considering the experimental data and previously reported calculations on the SRO system, [40][41][42] an effective Hubbard parameter U eff = 3 eV is adopted for our calculations. Here, we define the total energy difference by considering the spin-quantization axis is IP (E // ) and OOP (E ⟘ ) as MAE, i.e., MAE = E // -E ⟘ .…”

Section: First-principles Calculationsmentioning

confidence: 99%

Tunable Magnetic Anisotropy in Patterned SrRuO₃ Quantum Structures: Competition between Lattice Anisotropy and Oxygen Octahedral Rotation

Wang

Laskin

et al. 2022

Adv Funct Materials

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Artificial perovskite-oxide nanostructures possess intriguing magnetic properties due to their tailorable electron-electron interactions, which are extremely sensitive to the oxygen coordination environment. To date, perovskite-oxide nanodots with sizes below 50 nm have rarely been reported. Furthermore, the oxygen octahedral distortion and its relation to magnetic properties in perovskite oxide nanodots remain unexplored yet. Here, we have studied the magnetic anisotropy in patterned SrRuO3 (SRO) nanodots as small as 30 nm while performing atomic-resolution electron microscopy and spectroscopy to directly visualize the constituent elements, in particular oxygen ions. We observe that the magnetic anisotropy and RuO6 octahedra distortion in SRO nanodots are both nanodots' size-dependent but remain unchanged in the first 3-unit-cell interfacial SRO monolayers regardless of the dots' size. Combined with the first principle calculations, we unravel a unique structural mechanism behind the nanodots' size-dependent magnetic anisotropy in SRO nanodots, sugguesting that the competition between lattice anisotropy and oxygen octahedral rotation mediates anisotropic exchange interactions in SRO nanodots. These findings demonstrate a new avenue towards tuning magnetic properties of correlated perovskite oxides and imply that patterned nanodots could be a promising playground for engineering emergent functional behaviors.

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“…This scenario of stacking is very popular to explore interesting properties at the two-dimensional perovskite materials [40][41][42]. For ferromagnet SrRuO 3 below 2-4 unit cells, ferromagnetic/metal to antiferromagnetic/insulator transitions were predicted as the result of inversion symmetry breaking combined with non-degenerate Ru 4d orbitals via crystal field splitting [43][44][45].…”

Section: Introductionmentioning

confidence: 99%

First-principles design of ferromagnetic monolayer MnO₂ at the complex interface

2023

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Rapidly increasing interest in low-dimensional materials is driven by the emerging requirement to develop nanoscale  solid-state devices with novel functional properties that are not available in three-dimensional bulk phases.  Among the well-known low-dimensional systems, complex transition metal oxide interface holds promise for broad applications in electronic and spintronics devices. Herein, intriguing metal-insulator and  ferromagnetic-antiferromagnetic transitions are achieved in monolayer MnO$_2$ that is sandwiched into  SrTiO$_3$-based heterointerface systems through interface engineering.  By using first-principles calculations, we modeled three types of SrTiO$_3$-based heterointerface systems with different interface terminations and performed a comparative study on the spin-dependent magnetic and electronic properties that are established in the confined MnO$_2$ monolayer. First-principles study predicts that metal-insulator transition and magnetic transition in the monolayer MnO$_2$ are independent on the thickness of capping layers. Moreover, 100$\%$ spin-polarized two-dimensional electron gases accompanied by robust room temperature magnetism are uncovered in the monolayer MnO$_2$. Not only is the buried MnO$_2$ monolayer a new interface phase of fundamental physical interest, but it is also a promising candidate material for nanoscale spintronics applications. Our study suggests interface engineering at complex oxide interfaces is an alternative approach to designing high-performance two-dimensional materials.

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Strain Induced Metal–Insulator Transition of Magnetic SrRuO3 Single Layer in SrRuO3/SrTiO3 Superlattice

Cited by 5 publications

References 53 publications

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Tunable Magnetic Anisotropy in Patterned SrRuO₃ Quantum Structures: Competition between Lattice Anisotropy and Oxygen Octahedral Rotation

First-principles design of ferromagnetic monolayer MnO₂ at the complex interface

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Strain Induced Metal–Insulator Transition of Magnetic SrRuO3 Single Layer in SrRuO3/SrTiO3 Superlattice

Cited by 5 publications

References 53 publications

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Tunable Magnetic Anisotropy in Patterned SrRuO3 Quantum Structures: Competition between Lattice Anisotropy and Oxygen Octahedral Rotation

First-principles design of ferromagnetic monolayer MnO2 at the complex interface

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Tunable Magnetic Anisotropy in Patterned SrRuO₃ Quantum Structures: Competition between Lattice Anisotropy and Oxygen Octahedral Rotation

First-principles design of ferromagnetic monolayer MnO₂ at the complex interface