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Ferroelectric tunnel junctions, in which ferroelectric polarization and quantum tunneling are closely coupled to induce the tunneling electroresistance (TER) effect, have attracted considerable interest due to their potential in non-volatile and low-power consumption memory devices.The ferroelectric size effect, however, has hindered ferroelectric tunnel junctions from exhibiting robust TER effect. Here, our study proposes doping engineering in a two-dimensional in-plane ferroelectric semiconductor as an effective strategy to design a two-dimensional ferroelectric tunnel junction composed of homostructural p-type semiconductor/ferroelectric/n-type semiconductor.Since the in-plane polarization persists in the monolayer ferroelectric barrier, the vertical thickness of two-dimensional ferroelectric tunnel junction can be as thin as monolayer. We show that the monolayer In:SnSe/SnSe/Sb:SnSe junction provides an embodiment of this strategy. Combining density functional theory calculations with non-equilibrium Green's function formalism, we investigate the electron transport properties of In:SnSe/SnSe/Sb:SnSe and reveal a giant TER effect of 1460%. The dynamical modulation of both barrier width and barrier height during the ferroelectric switching are responsible for this giant TER effect. These findings provide an important insight towards the understanding of the quantum behaviors of electrons in materials at the twodimensional limit, and enable new possibilities for next-generation non-volatile memory devices based on flexible two-dimensional lateral ferroelectric tunnel junctions. * Electronic address:

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Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in the human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a LaSrMnO/BaTiO/LaSrMnO multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence.