Strain in Nanoscale Germanium Hut Clusters on Si(001) Studied by X-Ray Diffraction

In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

“…The dot shape was investigated by grazing-incidence small angle scattering [7][8][9] and intensity mapping in reciprocal space [10]. The strain distribution inside the dots was studied by thorough X-ray reciprocal space mapping [10][11][12][13] and by analysis of X-ray diffraction profiles [14]. The chemical composition in the dots was analyzed by utilizing X-ray anomalous scattering [15][16][17] and the structure factor of zinc-blendetype crystals [10].…”

Size distribution and electroluminescence of self-assembled Ge dots

“…It is obvious that the formation of 3D islands allows the reduction of strain energy in the Ge layer and therefore the islands are at least partially relaxed. 18,[29][30][31][32] From the measurement of inplane strain in coherent Ge islands on Si͑001͒ by TEM after deposition of 11 ML Ge at 600°C by CVD using GeH 4 it was deduced that no significant in-diffusion of Si has occured and that a strain relaxation of the island of up to 84% has taken place. 30 Other authors report of a Si content of 40% in capped islands deposited at 750°C.…”

Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots

“…X-ray diffraction generally has the potential to resolve the distributions of chemical composition and strain fields [13]. In many cases, however, the complete intensity distribution has to be calculated using a structural model with a large number of free fitting parameters [14,15]. Self-assembled quantum dots, which possess an inherent wealth of threedimensional information, call for methods providing a more direct determination of structural details.…”