In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

Takahasi, Masamitu; Мizuki, J.

doi:10.1016/j.jcrysgro.2004.11.241

Cited by 12 publications

(7 citation statements)

References 24 publications

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“…Epitaxial growth techniques have been used to overcome these limitations using a variety of deposition techniques (atomic laser deposition, pulsed laser deposition, sputtering, chemical vapor deposition, molecular beam epitaxy) to sequentially deposit the constituents, but this approach typically requires a lattice match between the constituent compounds. − Even with epitaxial growth techniques, it is frequently difficult to find growth conditions that enable the preparation of both components because of conflicting demands on growth conditions resulting from the high vapor pressure of some elements (such as chalcogenides) and the need for high surface temperatures to obtain sufficient surface mobilities of other elements (such as third-row transition metals). The lack of suitable growth conditions, suitable latticed matched substrates, or lattice match between the components precludes the growth of many potential materials. , One exception to the lattice match requirement is the van der Waals epitaxy approach pioneered by Koma for compounds containing van der Waals gaps in their structures, such as the dichalcogenides, but such intergrowths are often limited by the conflicting demands on growth conditions stated above. − …”

Section: Introductionmentioning

confidence: 99%

“…The lack of suitable growth conditions, suitable latticed matched substrates, or lattice match between the components precludes the growth of many potential materials. 17,18 One exception to the lattice match requirement is the van der Waals epitaxy approach pioneered by Koma for compounds containing van der Waals gaps in their structures, such as the dichalcogenides, but such intergrowths are often limited by the conflicting demands on growth conditions stated above. [19][20][21][22] In this paper, we show that it is possible to prepare the first 16 members of the {[(VSe 2 ) n ] 1.06 (TaSe 2 ) m } z (m, n ) 1-4) family using modulated elemental reactants, a technique that involves sequentially depositing elements in the appropriate atomic ratios and absolute thicknesses on an ambient temperature substrate followed by a low-temperature anneal.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis of a Family of {[(VSe₂)_n]_1.06(TaSe₂)_m}_z Compounds

et al. 2007

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The first sixteen members of the {[(VSe 2 ) n ] 1.06 (TaSe 2 ) m } z family of compounds where n and m were varied from 1 to 4 were synthesized by annealing preconfigured reactants. The factor of 1.06 originates from the ab-plane lattice mismatch of VSe 2 and TaSe 2 , reflecting the non-epitaxial structural relationship between the components. Each individual compound was addressed by sequentially depositing n layers of alternating elemental V and Se followed by m layers of alternating elemental Ta and Se in which the thickness of each pair of elemental layers was calibrated to yield a single-crystalline layer of the metal diselenide on annealing at low temperature for a short time. The structural changes during the transformation from initial reactant to crystalline superstructure are followed using X-ray diffraction. The structure of these nanoscale superstructures consist of an integral number of VSe 2 and TaSe 2 layers with minimal cation mixing between the layers. Electrical measurements show that all of the members of this family are metallic.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis of a Family of {[(VSe₂)_n]_1.06(TaSe₂)_m}_z Compounds

et al. 2007

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“…The chemical composition in the dots was analyzed by utilizing X-ray anomalous scattering [13][14][15][16][17] and the structure factor of zinc-blende type crystals [8]. More recently, in-situ X-ray diffraction measurements have been carried out during InAs/GaAs(001) quantum dot growth [18,19]. These X-ray techniques are promising to reveal structural properties including internal strains and chemical compositions, which cannot be determined by conventional techniques including electron diffraction and scanning-probe microscopy.…”

Section: Introductionmentioning

confidence: 99%

In-situ X-ray diffraction study of InAs/GaAs(001) quantum dot growth

Takahasi¹,

Kaizu²,

Мizuki³

2007

Trans. Mat. Res. Soc. Japan

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Molecular beam epitaxial (MBE) growth of InAs/GaAs(OOl) quantum dots and their annealing after deposition were investigated by grazing-incidence X-ray diffraction using a diffractometer integrated with an MBE apparatus. Use of synchrotron radiation and a twodimensional X-ray detector enabled X-ray diffraction intensity mapping in the reciprocal lattice space at a rate of less than 10 s per frame. Results suggest that the degree of alloying that depends on the growth temperature has a strong influence on the structural evolution during annealing.

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“…[54][55][56][57][58][59][60][61][62] One of the advantages of XRD as an in situ tool is its wide application range as a consequence of the weak interaction of X-rays with matter. Crystal growth takes place at the surface of a crystal in contact with a mother phase.…”

Section: Introductionmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

Cited by 12 publications

References 24 publications

Synthesis of a Family of {[(VSe₂)_n]_1.06(TaSe₂)_m}_z Compounds

Synthesis of a Family of {[(VSe₂)_n]_1.06(TaSe₂)_m}_z Compounds

In-situ X-ray diffraction study of InAs/GaAs(001) quantum dot growth

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

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In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

Cited by 12 publications

References 24 publications

Synthesis of a Family of {[(VSe2)n]1.06(TaSe2)m}z Compounds

Synthesis of a Family of {[(VSe2)n]1.06(TaSe2)m}z Compounds

In-situ X-ray diffraction study of InAs/GaAs(001) quantum dot growth

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

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Synthesis of a Family of {[(VSe₂)_n]_1.06(TaSe₂)_m}_z Compounds

Synthesis of a Family of {[(VSe₂)_n]_1.06(TaSe₂)_m}_z Compounds