Strain evolution in hydrogen-implanted silicon

Abstract

The structural changes that accommodate wafer splitting after hydrogen implantation of silicon and the transfer of split layers to a handle substrate were investigated using triple axis x-ray diffraction, to monitor the strain in the implanted layer, and atomic force microscopy. Silicon substrates (004) were implanted with a hydrogen dose that ranged from 5×1015 cm−2 to 8×1016 cm−2 and energies of either 30 kV or 140 kV. The changes in the implanted layer properties were investigated after annealing at 150–300°C for short times. For annealing temperatures up to 150°C, the strain-induced implant profile did not change appreciably nor did the surface roughness increase, indicating that, for these implant conditions, the implant is stable. Annealing at 200°C or higher for 10 min or more led to increased surface roughness and a change to the implant profile, although blister formation did not occur. Higher surface roughness is not conducive to successful wafer bonding, so these measurements helped to determine the annealing sequence that is appropriate for bonding. In this case, hydrophobic bonded wafers were successfully fabricated with the transferred layer showing similar structural properties as a thin epitaxial film of the same thickness. The use of x-ray scattering for this technique can be easily transferred to other materials for which other techniques, such as infrared absorption, have not been developed.

Low temperature exfoliation process in hydrogen-implanted germanium layers

“…/ 2 diffraction patterns provide information about strain involved by the H 2 + implant. 13,14 Negligible strain profile variation was observed across the wafer, which suggests excellent implant uniformity among the 1 cm 2 samples. In addition, XRD measurements suggest that nucleation is already initialized during hydrogen implantation due to lack of wafer cooling during hydrogen implantation.…”

“…In addition, XRD measurements suggest that nucleation is already initialized during hydrogen implantation due to lack of wafer cooling during hydrogen implantation. 14 Following XRD measurements, a set of different anneal conditions was then considered in order to estimate the optimum thermal process to induce exfoliation. Implanted samples were encapsulated and sequentially annealed according to conditions described in Table I.…”

“…It is attributed to local lattice deformations due to hydrogen gathering. 14 The latter is observed after the STA at 300°C, irrespective of the anneal temperature considered for completing the defect nucleation ͓Fig. 5͑b͔͒.…”

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

“…The inclusion of a layer transfer step by hydrogen-induced exfoliation, however, allows for the reuse of the original CdZnTe substrate. Layer transfer by wafer bonding and hydrogen ion implantation [8][9][10] has been extensively addressed for silicon, 8,11 SiC, 12,13 and SiGe graded alloys 14 but only recently with III-V materials, 15 in which it was demonstrated that a lower temperature (150°C) postimplant defect nucleation step followed by a higher temperature (ϳ300°C) defect growth exfoliation step promoted layer exfoliation. To our knowledge, there are no published reports 16 of CdZnTe blistering/exfoliation.…”

High‐Energy X‐Rays: A tool for Advanced Bulk Investigations in Materials Science and Physics

“…They have been employed by the most different techniques concerning different questions, as the Compton spectroscopy to measure the momentum-distributions of bound electrons (Isaacs et al, 1999;Suortti et al, 2001) or the atomic and nuclear spectroscopy to access high-energy levels (Bikit et al, 1987;Materna et al, 1999;Schnier, 2002). High-resolution triple crystal diffractometry is pursued to investigate phase transitions in single crystals such as magnetic or charge ordering and structural changes (Strempfer et al, 1996(Strempfer et al, , 1997Chatterji et al, 1998;Wilkins et al, 2000;Bastie et al, 2003;Hatton et al, 2003;Liss et al, 2003;Miclaus and Goorsky, 2003) or to analyze artificial superstructures or tiny strain gradients as in optical band-gap structures (Liss et al, 1998b) or ultrasonically excited crystals (Liss et al, 1997a(Liss et al, ,b, 1998a. Both white beam and monochromatic beam technologies can be employed to study residual strains and textures in polycrystalline samples for materials science purposes (Reimers et al, 1998Pyzalla et al, 1999Pyzalla et al, , 2000aPyzalla et al, ,b,c, 2001Withers et al, 2002;Brokmeier et al, 2003;Wcislak et al, 2003).…”