Strain Engineering of Epitaxial Oxide Heterostructures Beyond Substrate Limitations

Deng, Xiong; Chen, Chao; Chen, Deyang; Cai, Xiangbin; Xu, Chao; Yin, Xiaozhe; Tian, Guo; Fan, Zhen; Hou, Zhipeng; Qin, Minghui; Lu, Xubing; Zhou, Guofu; Chen, Lang; Wang, Ning; Zhu, Ye; Gao, Xingsen; Liu, Junming

doi:10.2139/ssrn.3376672

Cited by 3 publications

(2 citation statements)

References 62 publications

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“…Strain engineering has been demonstrated as a powerful tool to tune the phase structures and physical properties in functional oxide thin lms [29][30][31][32] . In particular, epitaxial compressive strain originates from the lattice mismatch between the thin lm and the underneath substrate can elongate the c-axis lattice constant and tune the dipoles from in-plane to out-of-plane, leading to the enhancement of the polarization and coercive eld in ferroelectric thin lms [33][34][35] .…”

Section: Introductionmentioning

confidence: 99%

Strain tuning of negative capacitance in ferroelectric KNbO3 thin films

Luo

Chen

Wang

et al. 2022

Preprint

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Ferroelectrics with negative capacitance effect can amplify the gate voltage in field-effect transistors to achieve low power operation beyond the limits of the Boltzmann's Tyranny. The reduction of power consumption depends on the capacitance matching between the ferroelectric layer and gate dielectrics, which can be well controlled by adjusting the negative capacitance effect in the ferroelectrics. However, it is a great challenge to experimentally tune the negative capacitance effect. Here, the observation of tunable negative capacitance effect in ferroelectric KNbO3 through strain engineering is demonstrated. The magnitude of the voltage reduction and negative slope in polarization-electric field (P-E) curves as the symbol of negative capacitance effect can be controlled by imposing various epitaxial compressive strain. The expansion of negative curvature region in polarization-energy landscape under compressive strain is responsible for the tunable negative capacitance. Our work paves the way for fabricating low power devices and further reducing energy consumption in electronics.

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Section: Introductionmentioning

confidence: 99%

Strain tuning of negative capacitance in ferroelectric KNbO3 thin films

Luo

Chen

Wang

et al. 2022

Preprint

Self Cite

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“…Most carriers are either based on semiconductor substrates or polycrystalline plates, so an integration with these carriers is necessary in order to achieve a large-scale mass production and further reduce the cost. Recently, a study reported by Deng et al 9 delivers a brilliant idea to overcome the bottleneck of strain engineering. In this study, a model complex oxide, multiferroic BiFeO 3 was selected because of the mutual coupling between electric and magnetic orders and the variety of phase under different strain states.…”

mentioning

confidence: 99%

Advances in strain engineering on oxide heteroepitaxy

Shao

Chu

2021

Matter

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A perspective on electrode engineering in ultrathin ferroelectric heterostructures for enhanced tunneling electroresistance

Zhang

Valanoor

2020

Applied Physics Reviews

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The combination of ferroelectricity and quantum tunneling enables the tantalizing possibility of next-generation nonvolatile memories based on ferroelectric tunnel junctions (FTJs). In the last two decades, significant progress has been achieved in the understanding of FTJs in terms of the role of the critical thickness for ferroelectricity, interface-related factors that yield an enhanced tunneling electroresistance effect, as well exploiting the combination of magnetism and ferroelectricity to realize multiferroic or magnetoelectric tunnel junctions. One key ingredient in the successful design of FTJs is the type and nature of the electrode used—indeed device performance strongly hinges on the ability to precisely tune and modulate the electrostatic boundary conditions. This perspective presents an overview of the experimental state of the art in electrode engineering for FTJs. We discuss related governing factors and methods for various electrode-FTJ combinations, highlighting and comparing the advantages and weaknesses for each system. Finally, we also reveal the challenges and identify the opportunities for the future development of FTJs. In summary, we aim to provide significant insights into electrode engineering of high-quality FTJs with excellent tunneling electroresistance performance.

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Strain Engineering of Epitaxial Oxide Heterostructures Beyond Substrate Limitations

Cited by 3 publications

References 62 publications

Strain tuning of negative capacitance in ferroelectric KNbO3 thin films

Strain tuning of negative capacitance in ferroelectric KNbO3 thin films

Advances in strain engineering on oxide heteroepitaxy

A perspective on electrode engineering in ultrathin ferroelectric heterostructures for enhanced tunneling electroresistance

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Strain Engineering of Epitaxial Oxide Heterostructures Beyond Substrate Limitations

Cited by 3 publications

References 62 publications

﻿Strain tuning of negative capacitance in ferroelectric KNbO3 thin films

﻿Strain tuning of negative capacitance in ferroelectric KNbO3 thin films

Advances in strain engineering on oxide heteroepitaxy

A perspective on electrode engineering in ultrathin ferroelectric heterostructures for enhanced tunneling electroresistance

Contact Info

Product

Resources

About

Strain tuning of negative capacitance in ferroelectric KNbO3 thin films

Strain tuning of negative capacitance in ferroelectric KNbO3 thin films